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FST100200 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOT 200V 50A TO249AB. Review the specifications below when checking this part for your BOM.
The FST100200 is a silicon power Schottky rectifier in the TO-249AB package, rated for a repetitive peak reverse voltage of 200 V and an average forward current of 100 A. It features a maximum instantaneous forward voltage of 0.92 V at 150 °C and supports a peak forward surge current of 1000 A. The device operates within a junction temperature range of -55 °C to +150 °C and provides a thermal resistance from junction to case of 1.10 °C/W per leg.
Verify the specific part marking against official GeneSiC Semiconductor documentation to confirm the 200 V rating. Ensure the TO-249AB package dimensions match the design footprint requirements. Confirm that the thermal management solution accommodates the specified junction-to-case thermal resistance under expected operating loads.
Select this component when a high-current Schottky rectifier with low forward voltage drop is required. The TO-249AB package facilitates press-fit or screw mounting. Consider the 200 V blocking voltage for applications requiring moderate isolation levels. Evaluate the thermal performance based on the 1.10 °C/W junction-to-case resistance.
This device belongs to the FST100 series of silicon power Schottky diodes manufactured by GeneSiC Semiconductor. The series includes variants with different reverse voltage ratings, such as the FST100150. These components are designed for high-efficiency rectification in industrial and commercial power electronics applications.
Direct substitutes include other 200 V, 100 A Schottky rectifiers in the TO-249AB package. Verify electrical parameters and pinout compatibility before substitution.
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