FYV0203DNMTF

Diode Arrays Overview

The onsemi FYV0203DNMTF is a Schottky barrier diode housed in an SOT-23 package. It features a maximum repetitive reverse voltage of 30 V and an average rectified forward current rating of 0.2 A. The device supports a non-repetitive peak surge current of 0.6 A at a pulse width of 1.0 s. Operating junction temperature reaches 150 °C, with a storage range from -65 to +150 °C. Forward voltage drop varies between 210 mV and 1000 mV depending on current levels. Reverse current is specified at 0.2 uA at rated voltage and 25 °C.

Diode Arrays Feature Summary

• Schottky barrier construction provides low forward voltage drop and negligible reverse recovery time for high-speed switching applications.
• Integrated guard ring design offers protection against over-voltage conditions to enhance device reliability.
• Small SOT-23 surface-mount footprint enables efficient space utilization in compact circuit designs.

Diode Arrays Applications

• Signal routing tasks
• Rail-to-rail protection circuits
• RF balanced mixers and demodulators

Diode Arrays Procurement Notes

Verify the component origin carefully as Fairchild Semiconductor was acquired by onsemi. Confirm that the specific suffix MTF corresponds to the requested tape and reel packaging configuration. Ensure the part number matches the exact electrical specifications required for your design before finalizing procurement orders.

Diode Arrays Selection Notes

Select this component when low capacitance and fast switching are critical requirements. The SOT-23 package suits space-constrained layouts. Evaluate thermal resistance limits under continuous load conditions. Consider the trade-off between leakage current and forward voltage drop based on the specific operating temperature range of the target application.

Diode Arrays Part Context

This device belongs to the FYV0203 series of small-signal Schottky diodes originally developed by Fairchild Semiconductor. The series includes variants such as FYV0203S, FYV0203DP, and FYV0203DS, which share similar electrical characteristics but differ in pin configurations or marking codes. These components are designed for general-purpose rectification and signal processing.

Diode Arrays Replacement Considerations

• FYV0203S
• FYV0203DP
• FYV0203DS

Diode Arrays FAQ

What is the total capacitance of the FYV0203DNMTF?

The total capacitance is specified as a maximum of 10 pF when measured at a reverse voltage of 1 V and a frequency of 1.0 MHz.

How does the reverse current change with temperature?

Reverse current increases significantly with temperature; it is specified at 0.2 uA at 25 °C and rises to 130 uA at an operating temperature of 125 °C.

What is the reverse recovery time for this diode?

The reverse recovery time is typically 5 ns, measured under conditions where forward and reverse currents are 10 mA with a load resistance of 100 ohms.