G160N04S2

$0.49

Description：MOSFET 2N-CH 40V 9A 8SOP
Series：-

SKU:f375e7486b68 Category: FET, MOSFET Arrays Brand: Goford Semiconductor

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Product introduction

G160N04S2 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is MOSFET 2N-CH 40V 9A 8SOP. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for G160N04S2

Description：MOSFET 2N-CH 40V 9A 8SOP
Series：-
Mfr：Goford Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：40V
Current - Continuous Drain (Id) @ 25°C：9A (Tc)
Rds On (Max) @ Id, Vgs：15mOhm @ 4A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：989pF @ 20V
Power - Max：2.5W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOP
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for G160N04S2

G160N04S2

FET, MOSFET Arrays Overview

The G160N04S2 is a dual N-channel enhancement mode power MOSFET manufactured by Goford Semiconductor. It utilizes advanced trench technology to achieve low on-resistance and gate charge. The device features a 40V drain-source voltage rating and supports a continuous drain current of 9A at 25°C case temperature. Key electrical parameters include an on-resistance of less than 16mΩ at VGS=10V and 21mΩ at VGS=4.5V. It operates within a junction temperature range of -55°C to 150°C and is housed in an SOP-8 Dual package.

FET, MOSFET Arrays Feature Summary

Dual N-channel configuration with identical low-side and high-side switches
Advanced trench technology for excellent RDS(ON) and low gate charge
100% avalanche tested for ruggedness
Epoxy meets UL 94 V-0 flammability rating

FET, MOSFET Arrays Applications

Power switch
DC/DC converters

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering information against official manufacturer documentation before procurement. Confirm that the SOP-8 Dual package marking corresponds to 'G160N04D'. Ensure compliance with RoHS standards and check for any specific handling requirements related to the surface mount packaging format.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring two matched N-channel switches in a compact footprint. Consider the thermal resistance of 50°C/W when designing heat dissipation strategies. Verify that the gate drive voltage aligns with the specified thresholds for optimal conduction performance.

FET, MOSFET Arrays Part Context

This part belongs to the Goford Semiconductor power MOSFET portfolio, designed for general-purpose switching applications. It is distinct from single-channel variants and offers integrated dual-switch functionality suitable for bridge configurations or isolated control circuits.