G170P02D32

$0.57

Description：MOSFET 2P-CH 20V 20A 8DFN
Series：-

SKU:2ad3fe76a479 Category: FET, MOSFET Arrays Brand: Goford Semiconductor

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Product introduction

G170P02D32 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is MOSFET 2P-CH 20V 20A 8DFN. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for G170P02D32

Description：MOSFET 2P-CH 20V 20A 8DFN
Series：-
Mfr：Goford Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：20A (Tc)
Rds On (Max) @ Id, Vgs：21mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：2193pF @ 10V
Power - Max：15W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerVDFN
Supplier Device Package：8-DFN (3.15x3.05) Dual
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for G170P02D32

G170P02D32

FET, MOSFET Arrays Overview

The G170P02D32 is a dual P-channel enhancement mode power MOSFET manufactured by Goford Semiconductor. It utilizes advanced trench technology to achieve low on-resistance and gate charge. The device features a -20V drain-source voltage rating and supports a continuous drain current of -20A at 25°C case temperature. On-resistance is specified as less than 21mΩ at VGS=-4.5V and less than 27mΩ at VGS=-2.5V. It is housed in a DFN3X3-8L package with a junction-to-case thermal resistance of 8.3°C/W.

FET, MOSFET Arrays Feature Summary

Dual configuration providing two identical low-side and high-side switches within a single compact package.
Advanced trench technology designed to deliver excellent on-resistance characteristics and low gate charge for efficient switching.
100% avalanche tested to ensure robustness against inductive load switching events.

FET, MOSFET Arrays Applications

Power switch applications
DC/DC converters

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix and packaging quantity, which is listed as 5000 pieces per reel. Confirm that the component meets RoHS compliance requirements for your target market. Ensure the DFN3X3-8L footprint matches your PCB design constraints. Check for any specific handling instructions related to moisture sensitivity level if applicable.

FET, MOSFET Arrays Selection Notes

Select this component when a dual P-channel MOSFET solution is required for space-constrained designs. The DFN3X3-8L package offers a small footprint suitable for high-density layouts. Consider the thermal resistance values for heat dissipation planning. Verify that the gate drive voltage levels align with the specified RDS(on) thresholds for optimal performance.

FET, MOSFET Arrays Part Context

This part belongs to Goford Semiconductor's lineup of dual power MOSFETs. These devices are engineered for applications requiring synchronized or complementary switching actions in a minimal area. The dual structure simplifies circuit design by integrating matched pairs into one unit.