G350N06D32

FET, MOSFET Arrays Overview

The G350N06D32 is a dual N-channel enhancement mode power MOSFET manufactured by Goford Semiconductor. It utilizes advanced trench technology to achieve low on-resistance and gate charge. The device features a 60V drain-source voltage rating and supports a continuous drain current of 10A at 25°C case temperature. Key electrical parameters include a maximum on-resistance of 35mΩ at VGS=10V and 40mΩ at VGS=4.5V, with a total gate charge of 25nC. It operates within a junction temperature range of -55°C to 150°C.

FET, MOSFET Arrays Feature Summary

• Dual N-Channel Configuration: Integrates two identical low-side and high-side switches in a single package for space-efficient designs.
• Advanced Trench Technology: Provides excellent RDS(ON) performance and low gate charge characteristics.
• High Avalanche Capability: Subjected to 100% avalanche testing to ensure ruggedness and reliability under transient conditions.

FET, MOSFET Arrays Applications

• Power switching circuits
• DC/DC converters

FET, MOSFET Arrays Procurement Notes

Verify the component against the official Goford Semiconductor datasheet (Rev A1829-V1.1). Confirm the package marking reads 'G350N06D' and the physical footprint matches DFN3X3-8L. Ensure compliance with RoHS standards and check for moisture sensitivity level 3 requirements during storage and handling.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring compact dual-switch solutions with moderate voltage ratings. The low thermal resistance allows for efficient heat dissipation in surface-mount layouts. Consider the gate charge specifications when designing drive circuits to optimize switching speeds and minimize driver losses.

FET, MOSFET Arrays Part Context

This part belongs to the Goford Semiconductor lineup of dual N-channel power MOSFETs. It is designed for surface-mount assembly using the DFN3X3-8L package. The device is intended to replace discrete dual-MOSFET arrangements, reducing board space and simplifying layout for synchronous rectification or half-bridge topologies.

FET, MOSFET Arrays Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FET, MOSFET Arrays FAQ

What is the maximum pulsed drain current for the G350N06D32?

The maximum pulsed drain current (IDM) is 40A, limited by the maximum junction temperature.

Does the G350N06D32 support avalanche operation?

Yes, the device is 100% avalanche tested and has a single pulse avalanche energy rating of 36 mJ at TJ=25°C.

What is the reverse recovery time of the body diode?

The reverse recovery time (Trr) is 29 ns when measured at IF=5A, VGS=0V, and di/dt=100A/us.