G58N06F

$1.13

Description：N60V, 35A,RD<13M@10V,VTH1.0V~2.4
Series：TrenchFET®
Mfr：Goford Semiconductor
Package：Tube

SKU:ab3124d72e2a Category: Single FETs, MOSFETs Brand: Goford Semiconductor

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Product introduction

G58N06F is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is N60V, 35A,RD. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for G58N06F

Description：N60V, 35A,RD<13M@10V,VTH1.0V~2.4
Series：TrenchFET®
Mfr：Goford Semiconductor
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：13mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：75 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：30006 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：44W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220F
Package / Case：TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for G58N06F

G58N06F

Single FETs, MOSFETs Overview

The G58N06F is an N-Channel Enhancement Mode Power MOSFET manufactured by Goford Semiconductor. It features a 60V drain-source voltage rating and a continuous drain current of 35A at 25°C case temperature. The device utilizes advanced trench technology to achieve low on-resistance, specified as less than 13mΩ at VGS=10V and less than 15mΩ at VGS=4.5V. It supports a pulsed drain current of 140A and includes avalanche testing compliance. The component is housed in a TO-220F package with a junction-to-case thermal resistance of 2.8°C/W.

Single FETs, MOSFETs Feature Summary

Advanced trench technology for low gate charge and excellent RDS(ON)
100% avalanche tested for improved reliability
RoHS compliant construction

Single FETs, MOSFETs Applications

Power switch
DC/DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details, such as tube quantities or marking codes. Ensure that any selected variant matches the required electrical parameters and thermal characteristics for the intended application environment. Cross-reference datasheet specifications with distributor listings to confirm availability and authenticity before procurement.

Single FETs, MOSFETs Selection Notes

Select this component based on its 60V voltage rating and 35A continuous current capability. Consider the low on-resistance values at both 10V and 4.5V gate drive voltages for efficiency requirements. Evaluate the thermal performance using the provided junction-to-case resistance and safe operating area curves to ensure adequate heat dissipation in the target design.

Single FETs, MOSFETs Part Context

This part belongs to the power MOSFET category from Goford Semiconductor. It is designed for general-purpose switching applications requiring robust performance in compact packages. The TO-220F form factor facilitates through-hole mounting and effective thermal management for medium-power circuits.