Diode Arrays GC2X20MPS12-247 product image

GC2X20MPS12-247

$11.93
  • Description:DIODE ARR SIC 1200V 90A TO247-3
  • Series:SiC Schottky MPS™

SKU:1832927c0d80 Category: Brand:

  
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GC2X20MPS12-247 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE ARR SIC 1200V 90A TO247-3. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for GC2X20MPS12-247

  • Description:DIODE ARR SIC 1200V 90A TO247-3
  • Series:SiC Schottky MPS™
  • Mfr:GeneSiC Semiconductor
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max):1200 V
  • Current - Average Rectified (Io) (per Diode):90A (DC)
  • Voltage - Forward (Vf) (Max) @ If:1.8 V @ 20 A
  • Speed:No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr):0 ns
  • Current - Reverse Leakage @ Vr:18 µA @ 1200 V
  • Operating Temperature - Junction:-55°C ~ 175°C
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247-3
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for GC2X20MPS12-247

GC2X20MPS12-247

Diode Arrays Overview

The GC2X20MPS12-247 is a Silicon Carbide Schottky MPS diode rated for 1200 V repetitive peak reverse voltage and 40 A continuous forward current at 152°C. It features a TO-247-3 package with a junction-to-case thermal resistance of 0.61 °C/W per leg. The device exhibits a typical forward voltage of 1.8 V at 20 A and 25°C, with a total capacitive charge of 74 nC at 400 V. Non-repetitive surge current reaches 200 A, and avalanche energy capability is 360 mJ.

Diode Arrays Feature Summary

  • Enhanced surge and avalanche robustness for high reliability
  • Temperature independent fast switching with zero reverse recovery current
  • Positive temperature coefficient of forward voltage enabling easy parallel operation

Diode Arrays Applications

  • Power Factor Correction (PFC)
  • Electric Vehicles and Battery Chargers
  • Solar Inverters
  • Switched Mode Power Supply (SMPS)

Diode Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct package and electrical specifications. Confirm RoHS compliance status directly with GeneSiC Semiconductor representatives prior to procurement. Check for updated REACH SVHC declarations as these listings are subject to frequent revision by regulatory bodies.

Diode Arrays Selection Notes

Select this component for applications requiring high efficiency and reduced cooling requirements due to low thermal resistance. Ensure the operating junction temperature remains within the -55 to 175 °C range. Consider the 200 V/ns dV/dt ruggedness when designing circuits with rapid switching transitions or inductive loads.

Diode Arrays Part Context

This part belongs to the GeneSiC SiC Schottky MPS™ diode family, designed for wide bandgap semiconductor applications. It utilizes advanced silicon carbide material properties to achieve superior figure of merit compared to traditional silicon rectifiers. The TO-247-3 housing provides an industry-standard outline with improved thermal performance.

Diode Arrays Replacement Considerations

Consult official cross-reference lists from GeneSiC Semiconductor for verified substitutes. Generic equivalents may not match the specific avalanche energy ratings or thermal characteristics documented for this MPS topology.

Diode Arrays FAQ

What is the maximum non-repetitive peak forward surge current?

The maximum non-repetitive peak forward surge current is 200 A at a case temperature of 25°C for a duration of 10 ms.

Does this diode exhibit reverse recovery current?

No, the device features zero reverse recovery current due to its Schottky barrier structure.

What is the recommended mounting torque for the heatsink screws?

The recommended mounting torque for the screws connecting the device to the heatsink is 1.1 Nm.

GC2X20MPS12-247GC2X20MPS12-247
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