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GC2X8MPS12-247 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE ARR SIC 1200V 40A TO247-3. Review the specifications below when checking this part for your BOM.
The GC2X8MPS12-247 is a Silicon Carbide Schottky MPS diode rated for 1200V repetitive peak reverse voltage. It features a TO-247-3 package with two legs, providing a continuous forward current of 15A per leg at 175°C case temperature. The device exhibits low thermal resistance of 0.9°C/W junction-to-case and high dV/dt ruggedness up to 200 V/ns. Key electrical parameters include a maximum reverse leakage current of 9µA at 175°C and total capacitive charge of 40nC at 800V.
Verify the specific ordering suffix matches the required package variant. Confirm RoHS compliance status through official GeneSiC documentation prior to integration. Ensure thermal management design accounts for the specified junction-to-case thermal resistance values under actual operating conditions.
Select this component for high-frequency applications requiring low switching losses and high thermal stability. The MPS structure offers superior figure of merit compared to standard Schottky diodes. Evaluate derating curves for continuous current requirements based on expected case temperatures and duty cycles.
This part belongs to the GeneSiC Semiconductor SiC Schottky MPS™ diode family. It utilizes merged p-i-n Schottky technology to combine unipolar switching speed with bipolar ruggedness. The series is designed for high-power density systems where efficiency and reliability are critical constraints.
Direct substitutes within the same series include GC2X15MPS12-247 and GC2X20MPS12-247 for higher current ratings. Cross-brand replacements require verification of pinout compatibility and thermal characteristics.
The device supports a non-repetitive dV/dt of 200 V/ns when tested with V=0 to 960V.
No, the SiC Schottky MPS structure ensures zero reverse recovery current during switching transitions.
The diode has a positive temperature coefficient for forward voltage, which facilitates stable parallel operation without current hogging.
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