Diode Arrays GC2X8MPS12-247 product image

GC2X8MPS12-247

$5.20
  • Description:DIODE ARR SIC 1200V 40A TO247-3
  • Series:SiC Schottky MPS™

SKU:be133278c040 Category: Brand:

  
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GC2X8MPS12-247 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE ARR SIC 1200V 40A TO247-3. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for GC2X8MPS12-247

  • Description:DIODE ARR SIC 1200V 40A TO247-3
  • Series:SiC Schottky MPS™
  • Mfr:GeneSiC Semiconductor
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max):1200 V
  • Current - Average Rectified (Io) (per Diode):40A (DC)
  • Voltage - Forward (Vf) (Max) @ If:1.8 V @ 8 A
  • Speed:No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr):0 ns
  • Current - Reverse Leakage @ Vr:7 µA @ 1200 V
  • Operating Temperature - Junction:-55°C ~ 175°C
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247-3
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for GC2X8MPS12-247

GC2X8MPS12-247

Diode Arrays Overview

The GC2X8MPS12-247 is a Silicon Carbide Schottky MPS diode rated for 1200V repetitive peak reverse voltage. It features a TO-247-3 package with two legs, providing a continuous forward current of 15A per leg at 175°C case temperature. The device exhibits low thermal resistance of 0.9°C/W junction-to-case and high dV/dt ruggedness up to 200 V/ns. Key electrical parameters include a maximum reverse leakage current of 9µA at 175°C and total capacitive charge of 40nC at 800V.

Diode Arrays Feature Summary

  • Enhanced surge and avalanche robustness for improved system reliability
  • Temperature independent fast switching with zero reverse recovery current
  • Positive temperature coefficient of forward voltage enabling easy parallel operation without thermal runaway

Diode Arrays Applications

  • Power Factor Correction (PFC)
  • Solar Inverters
  • Switched Mode Power Supply (SMPS)
  • Anti-Parallel / Free-Wheeling Diode circuits

Diode Arrays Procurement Notes

Verify the specific ordering suffix matches the required package variant. Confirm RoHS compliance status through official GeneSiC documentation prior to integration. Ensure thermal management design accounts for the specified junction-to-case thermal resistance values under actual operating conditions.

Diode Arrays Selection Notes

Select this component for high-frequency applications requiring low switching losses and high thermal stability. The MPS structure offers superior figure of merit compared to standard Schottky diodes. Evaluate derating curves for continuous current requirements based on expected case temperatures and duty cycles.

Diode Arrays Part Context

This part belongs to the GeneSiC Semiconductor SiC Schottky MPS™ diode family. It utilizes merged p-i-n Schottky technology to combine unipolar switching speed with bipolar ruggedness. The series is designed for high-power density systems where efficiency and reliability are critical constraints.

Diode Arrays Replacement Considerations

Direct substitutes within the same series include GC2X15MPS12-247 and GC2X20MPS12-247 for higher current ratings. Cross-brand replacements require verification of pinout compatibility and thermal characteristics.

Diode Arrays FAQ

What is the maximum dV/dt rating for this diode?

The device supports a non-repetitive dV/dt of 200 V/ns when tested with V=0 to 960V.

Does this diode exhibit reverse recovery current?

No, the SiC Schottky MPS structure ensures zero reverse recovery current during switching transitions.

How does the forward voltage behave with temperature?

The diode has a positive temperature coefficient for forward voltage, which facilitates stable parallel operation without current hogging.

GC2X8MPS12-247GC2X8MPS12-247
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