GD2X30MPS12D

$14.71

Description：DIODE ARR SIC 1200V 55A TO247-3
Series：SiC Schottky MPS™

SKU:b3c8f6e3cb57 Category: Diode Arrays Brand: GeneSiC Semiconductor

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Product introduction

GD2X30MPS12D is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE ARR SIC 1200V 55A TO247-3. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for GD2X30MPS12D

Description：DIODE ARR SIC 1200V 55A TO247-3
Series：SiC Schottky MPS™
Mfr：GeneSiC Semiconductor
Package：Tube
Diode Configuration：1 Pair Common Cathode
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：1200 V
Current - Average Rectified (Io) (per Diode)：55A (DC)
Voltage - Forward (Vf) (Max) @ If：1.8 V @ 30 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：20 µA @ 1200 V
Operating Temperature - Junction：-55°C ~ 175°C
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247-3
Grade：-
Qualification：-

Diode Arrays datasheet and documents for GD2X30MPS12D

GD2X30MPS12D

Diode Arrays Overview

The GD2X30MPS12D is a Silicon Carbide Schottky MPS diode with a 1200 V repetitive peak reverse voltage and a 60 A continuous forward current rating. It utilizes Gen4 Thin Chip Technology to achieve low forward voltage and superior figure of merit. The device features zero reverse recovery current, temperature-independent fast switching, and high dV/dt ruggedness. Electrical characteristics include a maximum forward voltage of 1.8 V at 30 A and 25°C, and a total capacitive charge of 194 nC. It operates within a junction temperature range of -55°C to 175°C.

Diode Arrays Feature Summary

Gen4 Thin Chip Technology for low forward voltage
Zero reverse recovery current enabling fast switching
High dV/dt ruggedness and enhanced surge current withstand capability
Positive temperature coefficient of forward voltage

Diode Arrays Applications

Power Factor Correction (PFC)
Electric Vehicles and Battery Chargers
Solar Inverters
Switched Mode Power Supply (SMPS)
Motor Drives

Diode Arrays Procurement Notes

Verify the specific datasheet revision against the manufacturer's official website before finalizing design specifications. Confirm compliance requirements such as RoHS and REACH status directly with GeneSiC Semiconductor representatives. Ensure that thermal management designs account for the specified power dissipation limits and transient thermal impedance curves provided in the documentation.

Diode Arrays Selection Notes

Select this component for applications requiring high efficiency and fast switching speeds at 1200 V. The positive temperature coefficient facilitates easy paralleling without thermal runaway concerns. Evaluate the system's thermal environment against the derating curves to ensure the continuous forward current ratings are maintained under actual operating conditions.

Diode Arrays Part Context

This part belongs to the SiC Schottky MPS series from GeneSiC Semiconductor. It is housed in a TO-247-3 package designed for through-hole mounting. The device integrates silicon carbide technology to offer improved system reliability and reduced cooling requirements compared to traditional silicon alternatives.