GD2X30MPS12N

Diode Arrays Overview

The GD2X30MPS12N is a dual silicon carbide Schottky MPS diode manufactured by GeneSiC Semiconductor. It features a 1200V repetitive peak reverse voltage and a total continuous forward current of 98A per device (49A per leg at Tc=75°C). The component utilizes Gen4 Thin Chip Technology to achieve a low forward voltage and a superior figure of merit with a total capacitive charge of 194nC. It operates within a temperature range of -55°C to +175°C, offers high dv/dt ruggedness of 200 V/ns, and includes 100% avalanche testing for enhanced reliability.

Diode Arrays Feature Summary

• Gen4 Thin Chip Technology enables low forward voltage drop and improved system efficiency.
• Zero reverse recovery current ensures temperature-independent fast switching behavior.
• High dv/dt ruggedness supports robust performance in hard switching conditions.
• Positive temperature coefficient of forward voltage facilitates easy parallel operation without thermal runaway.

Diode Arrays Applications

• Power Factor Correction (PFC)
• Electric Vehicles and Battery Chargers
• Solar Inverters
• Switched Mode Power Supply (SMPS)
• Motor Drives

Diode Arrays Procurement Notes

Verify the specific revision status against the manufacturer's latest documentation before finalizing designs. Confirm that the SOT-227 package mounting torque requirements are met during assembly. Ensure thermal management solutions align with the specified power dissipation curves at the intended operating junction temperatures. Check compliance declarations for RoHS and REACH requirements relevant to the target market regulations.

Diode Arrays Selection Notes

Select this component for applications requiring high-frequency switching and reduced cooling requirements due to its low thermal resistance. Consider the 1200V rating and 60A per leg current capacity when designing circuits for electric vehicle chargers or solar inverters. Evaluate the positive temperature coefficient benefits if multiple units must be paralleled to increase current handling capability.

Diode Arrays Part Context

This part belongs to the SiC Schottky MPS™ Diode series from GeneSiC Semiconductor. It represents an evolution in silicon carbide technology designed to replace traditional silicon rectifiers in high-power density systems. The dual configuration in a single SOT-227 package allows for compact circuit board layouts while maintaining high isolation voltages between terminals.

Diode Arrays Replacement Considerations

Public confirmed substitute part numbers are not available in the provided datasheet.

Diode Arrays FAQ

What is the maximum non-repetitive avalanche energy rating?

The non-repetitive avalanche energy rating is 271 mJ per leg when tested with an inductance of 0.6 mH and a current of 30 A.

Does the GD2X30MPS12N exhibit reverse recovery current?

No, the device features zero reverse recovery current due to its Schottky construction, which eliminates ringing patterns during turn-off.

What is the isolation voltage specification?

The isolation voltage is 3000 Vrms for a duration of 1 second at 50/60 Hz, or 2500 Vrms for 60 seconds.