GE10MPS06Q-TR

$4.03

Description：RF DIODE SCHOTTKY 650V 8DFN
Series：MPS™

SKU:e59151686aa6 Category: RF Diodes Brand: GeneSiC Semiconductor

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Product introduction

GE10MPS06Q-TR is listed in the RF Diode range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is RF DIODE SCHOTTKY 650V 8DFN. Review the specifications below when checking this part for your BOM.

RF Diode specifications for GE10MPS06Q-TR

Description：RF DIODE SCHOTTKY 650V 8DFN
Series：MPS™
Mfr：GeneSiC Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Diode Type：Schottky - Single
Voltage - Peak Reverse (Max)：650V
Current - Max：10:00 AM
Capacitance @ Vr, F：-
Resistance @ If, F：-
Power Dissipation (Max)：-
Operating Temperature：-
Package / Case：8-VDFN Exposed Pad
Supplier Device Package：8-DFN (8x8)
Grade：-
Qualification：-

RF Diode datasheet and documents for GE10MPS06Q-TR

GE10MPS06Q-TR

RF Diode Overview

The GE10MPS06Q-TR is a Silicon Carbide (SiC) Schottky MPS diode manufactured by GeneSiC Semiconductor. It features a 650V repetitive reverse voltage rating and a 10A forward current capability. The device utilizes a PQFN 8x8 surface-mount package, designed for high-efficiency power conversion applications. Key electrical characteristics include a maximum forward voltage of 1.25V and a low reverse leakage current of 10uA. It supports an operating temperature range from -55°C to +175°C, ensuring reliability in demanding thermal environments.

RF Diode Feature Summary

Utilizes SiC Schottky MPS technology for superior switching performance
High thermal stability with operation up to 175°C junction temperature
Compact PQFN 8x8 footprint for dense PCB layouts

RF Diode Applications

DC-DC converters
Power factor correction circuits
Solar inverters

RF Diode Procurement Notes

Verify the specific suffix 'Q' against official GeneSiC documentation to confirm packaging or tape-and-reel specifications. Ensure the ordering quantity aligns with the manufacturer's factory pack requirements. Cross-reference the datasheet revision date to guarantee compatibility with your design parameters before finalizing procurement.

RF Diode Selection Notes

Select this component when a 650V SiC diode with a compact 8x8mm package is required. The 10A current rating suits moderate power levels where low forward voltage drop is critical. Consider the 175°C max temperature rating for high-ambient applications. Compare Rds(on) and Qg if active switching devices are also being evaluated for the same topology.

RF Diode Part Context

This part belongs to the GeneSiC SiC Schottky MPS series, focusing on high-frequency power management. The PQFN 8x8 package distinguishes it from larger TO-252 or standard diode packages. It complements other 650V SiC components like the G3F MOSFETs for complete power stage solutions.