Single Bipolar Transistors GES6014 PBFREE product image

GES6014 PBFREE

$0.37
  • Description:60V 800MA 625MW TH TRANSISTOR-SM
  • Series:-

SKU:1f59640f433c Category: Brand:

  
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GES6014 PBFREE is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 60V 800MA 625MW TH TRANSISTOR-SM. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for GES6014 PBFREE

  • Description:60V 800MA 625MW TH TRANSISTOR-SM
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Box
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):800 mA
  • Voltage - Collector Emitter Breakdown (Max):60 V
  • Vce Saturation (Max) @ Ib, Ic:150mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max):10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 3mA, 1V
  • Power - Max:625 mW
  • Frequency - Transition:105MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for GES6014 PBFREE

GES6014 PBFREE

Single Bipolar Transistors Overview

The GES6014 PBFREE is an NPN silicon small-signal transistor from Central Semiconductor Corp, housed in a TO-92-3 through-hole package. It features a maximum collector-emitter voltage of 60 V and a continuous collector current of 1.5 A. The device has a power dissipation rating of 1 W (ambient) or 625 mW (through-hole applications). Key electrical parameters include a gain bandwidth product (fT) of 335 MHz, an emitter-base voltage (VEBO) of 5 V, and a collector-emitter saturation voltage of 500 mV. Operating temperatures range from -65°C to +150°C.

Single Bipolar Transistors Feature Summary

  • NPN bipolar junction transistor configuration for general-purpose switching and amplification
  • High current capability with 1.5 A maximum collector current rating
  • Wide operating temperature range supporting extreme environmental conditions
  • Lead-free plating option available via PBFREE suffix designation

Single Bipolar Transistors Applications

  • General-purpose signal amplification circuits
  • Low-power switching applications
  • Audio frequency amplifier stages
  • Driver circuits for low-current loads

Single Bipolar Transistors Procurement Notes

Verify the exact part number includes the PBFREE suffix if lead-free compliance is required, as standard versions may differ. Confirm package style matches application needs, noting that power ratings vary between ambient (1 W) and through-hole (625 mW) mounting configurations. Check datasheet for specific terminal finish specifications and ensure thermal management aligns with the selected power dissipation limit.

Single Bipolar Transistors Selection Notes

Select this component when high collector current up to 1.5 A is needed alongside moderate voltage handling of 60 V. Consider the 335 MHz gain bandwidth product for frequency-sensitive designs. Ensure the TO-92-3 package fits the PCB layout constraints. Verify thermal requirements against the 625 mW through-hole dissipation limit if surface area is restricted.

Single Bipolar Transistors Part Context

The GES6014 series belongs to Central Semiconductor's small-signal transistor lineup, designed for robust performance in compact packages. The PBFREE variant indicates environmentally compliant manufacturing. This NPN device serves as a reliable alternative in circuits requiring higher current capacity than standard small-signal transistors while maintaining good frequency response characteristics.

Single Bipolar Transistors Replacement Considerations

Cross-reference with other NPN transistors offering similar 60 V, 1.5 A ratings and TO-92 packaging. Verify pinout compatibility and thermal characteristics before substitution. Ensure replacement parts meet the same fT and VEBO specifications for circuit integrity.

GES6014 PBFREEGES6014 PBFREE
$0.37
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