GKI04048

Description：MOSFET N-CH 40V 14A 8DFN
Series：-
Mfr：Sanken Electric USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:60d0bbf7a419 Category: Single FETs, MOSFETs Brand: Sanken Electric USA Inc.

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Product introduction

GKI04048 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Sanken Electric USA Inc.. Its product description is MOSFET N-CH 40V 14A 8DFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for GKI04048

Description：MOSFET N-CH 40V 14A 8DFN
Series：-
Mfr：Sanken Electric USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：14A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5mOhm @ 35.4A, 10V
Vgs(th) (Max) @ Id：2.5V @ 650µA
Gate Charge (Qg) (Max) @ Vgs：35.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2410 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：3.1W (Ta), 59W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-DFN (5x6)
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for GKI04048

GKI04048

Single FETs, MOSFETs Overview

The GKI04048 is a 40 V N-channel Trench Power MOSFET manufactured by Sanken Electric USA Inc. It features a maximum continuous drain current of 26 A at 25 °C case temperature and a low on-resistance (RDS(ON)) of 5.4 mΩ max at VGS = 10 V. The device supports 4.5 V gate drive with a total gate charge (Qg) of 16.0 nC, enabling high-speed switching. It operates within a junction temperature range up to 150 °C and is housed in a DFN 5 × 6 (L) package.

Single FETs, MOSFETs Feature Summary

Low on-resistance for efficient power handling
High-speed switching capability with low total gate charge
Compatible with 4.5 V gate drive logic levels
RoHS compliant construction

Single FETs, MOSFETs Applications

DC-DC converters
Synchronous rectification circuits
General-purpose power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision before integration, as component specifications may be subject to change without notice. Confirm that the design accounts for derating factors regarding voltage, current, and thermal stress to ensure reliability. Ensure proper electrostatic discharge precautions are followed during handling and storage to prevent damage to the semiconductor structure.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low conduction losses and fast switching speeds at 40 V. Evaluate the thermal resistance characteristics against the expected ambient temperature and PCB copper pad size. Consider the pulsed drain current limits when designing for transient load conditions or inductive switching scenarios.

Single FETs, MOSFETs Part Context

This part belongs to Sanken's N-channel Trench Power MOSFET lineup. It utilizes trench technology to achieve low RDS(ON) and fast switching performance. The device is intended for general-purpose electronic equipment and is not recommended for new designs according to the manufacturer documentation.