Diode Arrays GSD2004S-E3-18 product image

GSD2004S-E3-18

$0.15
  • Description:DIODE ARR GP 240V 225MA SOT23-3
  • Series:-

SKU:e553cf7ea191 Category: Brand:

  
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GSD2004S-E3-18 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR GP 240V 225MA SOT23-3. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for GSD2004S-E3-18

  • Description:DIODE ARR GP 240V 225MA SOT23-3
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Configuration:1 Pair Series Connection
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):240 V
  • Current - Average Rectified (Io) (per Diode):225mA
  • Voltage - Forward (Vf) (Max) @ If:1 V @ 100 mA
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):50 ns
  • Current - Reverse Leakage @ Vr:100 nA @ 240 V
  • Operating Temperature - Junction:150°C (Max)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for GSD2004S-E3-18

GSD2004S-E3-18

Diode Arrays Overview

The GSD2004S-E3-18 is a dual in-series small signal high voltage switching diode manufactured by Vishay Semiconductors. It utilizes silicon epitaxial planar technology and is housed in an SOT-23 package. The device features a continuous reverse voltage (VR) of 240 V and a peak repetitive reverse voltage (VRRM) of 300 V. It supports a continuous forward current (IF) of 350 mA and exhibits a typical reverse recovery time (trr) of 50 ns. Electrical characteristics include a maximum leakage current of 100 nA at VR = 240 V and a typical capacitance of 2 pF at 1 MHz.

Diode Arrays Feature Summary

  • Dual in-series configuration designed for applications requiring high voltage capability
  • Fast switching performance with low reverse recovery time
  • RoHS-compliant commercial grade construction

Diode Arrays Applications

  • High voltage switching circuits
  • Small signal rectification
  • General purpose electronic equipment

Diode Arrays Procurement Notes

Verify the specific ordering code suffix to confirm packaging quantity, as the -18 suffix indicates 10,000 units per reel. Confirm RoHS compliance status and ensure the component meets the required AEC-Q101 qualification if automotive application is intended, noting that the HE3_A variant holds this specific qualification.

Diode Arrays Selection Notes

Select this component when a compact dual-diode solution is needed for high-voltage isolation or switching. The SOT-23 package offers space efficiency compared to discrete single diodes. Ensure the operating temperature range of -55 °C to +150 °C aligns with the system environment and verify thermal dissipation requirements against the specified junction-to-ambient resistance.

Diode Arrays Part Context

This part belongs to the GSD series of dual in-series diodes from Vishay. It serves as a high-voltage alternative to standard small-signal diodes, integrating two serial-connected elements into a single surface-mount package to save board space while maintaining high breakdown voltage capabilities.

Diode Arrays Replacement Considerations

GSD2004S-HE3_A-18

Diode Arrays FAQ

What is the difference between the GSD2004S-E3-18 and GSD2004S-HE3_A-18?

The GSD2004S-HE3_A-18 is qualified to AEC-Q101 standards for automotive applications, whereas the GSD2004S-E3-18 is a commercial grade component.

What is the maximum peak repetitive reverse voltage for this device?

The maximum peak repetitive reverse voltage (VRRM) is 300 V.

GSD2004S-E3-18GSD2004S-E3-18
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