GSFN3013

$0.47

Description：MOSFET, P-CH, SINGLE, -40.00A, -
Series：-
Mfr：Good-Ark Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:5d8266ec7888 Category: Single FETs, MOSFETs Brand: Good-Ark Semiconductor

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Product introduction

GSFN3013 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Good-Ark Semiconductor. Its product description is MOSFET, P-CH, SINGLE, -40.00A, -. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for GSFN3013

Description：MOSFET, P-CH, SINGLE, -40.00A, -
Series：-
Mfr：Good-Ark Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：13mOhm @ 8A, 10V
Vgs(th) (Max) @ Id：2.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：37 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1480 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：30W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-PPAK (3.1x3.05)
Package / Case：8-PowerVDFN

Single FETs, MOSFETs datasheet and documents for GSFN3013

GSFN3013

Single FETs, MOSFETs Overview

The GSFN3013 is a 30V P-Channel MOSFET utilizing advanced process technology for high cell density and low on-resistance. It features a maximum drain-source voltage of -30V, continuous drain current of -40A at 25°C, and a typical RDS(ON) of 13mΩ. The device operates within a junction temperature range of -55°C to +150°C and is housed in a PPAK3x3 package.

Single FETs, MOSFETs Feature Summary

Advanced MOSFET process technology achieving high cell density
Low on-resistance combined with low gate charge
Fast switching capability with reverse body recovery

Single FETs, MOSFETs Applications

High efficiency switched mode power supplies
General purpose power management applications

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision (Doc.USGSFN3013xSR2.1) matches your design requirements. Confirm that the PPAK3x3 package dimensions align with your PCB footprint. Ensure thermal management strategies account for the specified junction-to-ambient resistance values under your operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a compact P-Channel solution with fast switching speeds. Evaluate the thermal performance against the 62 °C/W junction-to-ambient resistance. Consider the pulsed drain current rating if transient loads exceed the continuous -40A limit.

Single FETs, MOSFETs Part Context

This part belongs to Good-Ark Semiconductor's discrete MOSFET portfolio. It is designed as a complementary or standalone P-Channel device for power switching applications where size and efficiency are critical constraints.