Single FETs, MOSFETs GT55N06D5 product image

GT55N06D5

$1.03
  • Description:N60V,RD(MAX)<8M@10V,RD(MAX)<13M@
  • Series:SGT
  • Mfr:Goford Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:cfe8957127ae Category: Brand:

  
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GT55N06D5 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is N60V,RD(MAX). Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for GT55N06D5

  • Description:N60V,RD(MAX)<8M@10V,RD(MAX)<13M@
  • Series:SGT
  • Mfr:Goford Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:9mOhm @ 14A, 10V
  • Vgs(th) (Max) @ Id:2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:31 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1085 pF @ 30 V
  • FET Feature:-
  • Power Dissipation (Max):69W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-DFN (4.9x5.75)
  • Package / Case:8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for GT55N06D5

GT55N06D5

Single FETs, MOSFETs Overview

The GT55N06D5 is an N-channel enhancement mode power MOSFET manufactured by Goford Semiconductor. It utilizes advanced trench technology to achieve low on-resistance and gate charge. The device features a drain-source voltage of 60V and a continuous drain current of 45A at 25°C case temperature. On-resistance is specified as less than 9mΩ at VGS=10V and 13mΩ at VGS=4.5V. It operates within a junction temperature range of -55°C to 150°C and is housed in an 8-lead DFN5x6 package.

Single FETs, MOSFETs Feature Summary

  • Advanced trench technology for optimized performance
  • Low gate charge characteristics
  • High avalanche energy capability
  • RoHS compliant construction

Single FETs, MOSFETs Applications

  • Power switching circuits
  • DC/DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging configuration, such as reel quantities or tape specifications. Confirm that the component meets RoHS compliance requirements for your target assembly process. Cross-reference the part number with authorized distributors to validate authenticity and traceability before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a 60V rating with high current handling capabilities up to 45A. Consider the thermal resistance values when designing heat dissipation strategies for the DFN5x6 package. Ensure the driving circuit can provide sufficient gate voltage to minimize on-resistance during operation.

Single FETs, MOSFETs Part Context

This part belongs to the family of N-channel enhancement mode power MOSFETs designed for general-purpose power switching. It is engineered to replace older technologies by offering improved efficiency through reduced conduction losses and faster switching speeds enabled by lower gate charge parameters.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference lists from Goford Semiconductor for verified substitutes. Ensure any replacement matches the 60V drain-source voltage, 45A current rating, and compatible pinout configuration.

GT55N06D5GT55N06D5
$1.03
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