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GT55N06D5 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is N60V,RD(MAX). Review the specifications below when checking this part for your BOM.
The GT55N06D5 is an N-channel enhancement mode power MOSFET manufactured by Goford Semiconductor. It utilizes advanced trench technology to achieve low on-resistance and gate charge. The device features a drain-source voltage of 60V and a continuous drain current of 45A at 25°C case temperature. On-resistance is specified as less than 9mΩ at VGS=10V and 13mΩ at VGS=4.5V. It operates within a junction temperature range of -55°C to 150°C and is housed in an 8-lead DFN5x6 package.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging configuration, such as reel quantities or tape specifications. Confirm that the component meets RoHS compliance requirements for your target assembly process. Cross-reference the part number with authorized distributors to validate authenticity and traceability before finalizing procurement orders.
Select this component for applications requiring a 60V rating with high current handling capabilities up to 45A. Consider the thermal resistance values when designing heat dissipation strategies for the DFN5x6 package. Ensure the driving circuit can provide sufficient gate voltage to minimize on-resistance during operation.
This part belongs to the family of N-channel enhancement mode power MOSFETs designed for general-purpose power switching. It is engineered to replace older technologies by offering improved efficiency through reduced conduction losses and faster switching speeds enabled by lower gate charge parameters.
Consult official cross-reference lists from Goford Semiconductor for verified substitutes. Ensure any replacement matches the 60V drain-source voltage, 45A current rating, and compatible pinout configuration.
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