RF Diode HBAT-5402-TR1G product image

HBAT-5402-TR1G

  • Description:DIODE SCHOTTKY 30V 250MW SOT23-3
  • Series:HBAT-540x

SKU:25f7f879d0bd Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

HBAT-5402-TR1G is listed in the RF Diode range at ChipApex. The manufacturer field lists Broadcom Limited. Its product description is DIODE SCHOTTKY 30V 250MW SOT23-3. Review the specifications below when checking this part for your BOM.

RF Diode specifications for HBAT-5402-TR1G

  • Description:DIODE SCHOTTKY 30V 250MW SOT23-3
  • Series:HBAT-540x
  • Mfr:Broadcom Limited
  • Package:Tape & Reel (TR)
  • Diode Type:Schottky - 1 Pair Series Connection
  • Voltage - Peak Reverse (Max):30V
  • Current - Max:220 mA
  • Capacitance @ Vr, F:-
  • Resistance @ If, F:-
  • Power Dissipation (Max):250 mW
  • Operating Temperature:150°C (TJ)
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3

RF Diode datasheet and documents for HBAT-5402-TR1G

HBAT-5402-TR1G

RF Diode Overview

The HBAT-5402-TR1G is a high-performance Schottky diode from the HBAT-540x series, designed for transient suppression and circuit protection. It features ultra-low series resistance (2.4 Ω typical) to handle high forward currents without thermal runaway. The device operates with a peak inverse voltage of 30 V and a DC forward current rating of 220 mA in the SOT-23 package. It exhibits low capacitance (3.0 pF typical) and picosecond switching speeds, making it suitable for preserving signal waveshapes in high-speed digital data lines.

RF Diode Feature Summary

  • Ultra-low series resistance enables higher current handling capacity while minimizing power dissipation.
  • Low junction capacitance minimizes signal degradation and waveshape loss during high-speed switching.
  • Picosecond switching response allows rapid reaction to noise spikes with rise times as fast as 1 ns.

RF Diode Applications

  • Circuit protection against high current transients on data lines
  • Voltage clamping and clipping applications
  • High-speed switching circuits requiring waveshape preservation

RF Diode Procurement Notes

Verify component authenticity by checking manufacturer markings and datasheet specifications. Confirm package type and electrical ratings match design requirements before integration. Ensure proper handling procedures are followed to prevent electrostatic discharge damage during assembly and storage.

RF Diode Selection Notes

Select this component when low series resistance is critical for managing high transient currents without excessive voltage drop. Compare thermal resistance characteristics against alternative packages if operating near maximum junction temperature limits. Verify that the 30 V breakdown voltage meets the system's reverse voltage requirements.

RF Diode Part Context

This part belongs to the HBAT-540x family of Schottky diodes, which includes variants like the HBAT-5400, HBAT-540B, and HBAT-540C. These devices share similar electrical characteristics but differ in packaging and current handling capabilities based on their leadframe materials and physical dimensions.

RF Diode Replacement Considerations

Public confirmed substitutes include BAT54SWT1G and BAT54CTB_R1_00001. Verify compatibility regarding series resistance, capacitance, and package footprint before substitution.

HBAT-5402-TR1GHBAT-5402-TR1G

Click on the inquiry

Recent News