HN2D01JE(TE85L,F)

Diode Arrays Overview

The HN2D01JE(TE85L,F) is a silicon epitaxial planar ultra-high-speed switching diode array manufactured by Toshiba Semiconductor and Storage. It integrates two independent diodes within an ESV surface-mount package. Key electrical characteristics include a maximum repetitive peak reverse voltage of 85 V, a maximum average forward current of 100 mA, and a typical fast reverse recovery time of 1.6 ns. The device features a low typical forward voltage of 0.98 V and a small total capacitance of 0.5 pF, supporting operation across a junction temperature range from -55 °C to +150 °C.

Diode Arrays Feature Summary

• Integrates two independent ultra-high-speed switching diodes in a compact surface-mount configuration
• Provides fast reverse recovery performance with minimal total capacitance for high-frequency signal integrity
• Ensures low forward voltage drop to minimize power loss during conduction

Diode Arrays Applications

• High-speed signal switching circuits
• Clamping and protection applications in digital logic interfaces
• Demodulation stages in communication equipment

Diode Arrays Procurement Notes

Verify the complete part number including the (TE85L,F) suffix to confirm the specific tape-and-reel packaging format required for automated assembly. Confirm RoHS compliance status through official Toshiba documentation prior to integration. Ensure design specifications align with the absolute maximum ratings for reverse voltage and forward current to prevent device failure under surge conditions.

Diode Arrays Selection Notes

Select this component when circuit designs require dual independent switching paths within a minimal footprint. The low capacitance and rapid recovery characteristics make it suitable for high-frequency applications where signal distortion must be minimized. Evaluate thermal management requirements against the 100 mW power dissipation limit in the ESV package for dense PCB layouts.

Diode Arrays Part Context

This component belongs to Toshiba's lineup of silicon epitaxial planar diodes designed for general-purpose high-speed switching. The HN2D01JE variant specifically addresses needs for compact dual-diode solutions in portable electronics and data processing hardware. It complements other discrete switching devices by offering integrated functionality in a standardized surface-mount form factor.

Diode Arrays Replacement Considerations

Consult official Toshiba substitution guides for verified equivalents. Cross-reference pinout compatibility and electrical parameters such as reverse recovery time and forward voltage when considering alternative manufacturers.