HSMS-270P-TR1G

RF Diode Overview

The HSMS-270P-TR1G is a silicon Schottky barrier diode manufactured by Broadcom Limited. It features a dual series configuration housed in an SOT-363 (SC-88) surface-mount package. The device supports a maximum repetitive reverse voltage of 15 V and a forward current of 750 mA. Key electrical parameters include a forward voltage of 550 mV, a reverse current of 200 nA, and a junction capacitance of 6.7 pF at 0 V bias. It operates within a temperature range of -65°C to +150°C and dissipates up to 825 mW.

RF Diode Feature Summary

• Dual series Schottky barrier diode configuration for compact circuit integration
• Low junction capacitance suitable for high-frequency signal applications
• Silicon construction with robust thermal performance up to 150°C

RF Diode Applications

• RF detection circuits
• High-speed switching applications
• Signal demodulation systems

RF Diode Procurement Notes

This component is classified as obsolete or end-of-life by the manufacturer. Availability is restricted, and sourcing may require checking secondary market distributors. Verify RoHS compliance status through official documentation before procurement. Ensure compatibility with existing supply chain channels due to limited production volume.

RF Diode Selection Notes

Select this part for designs requiring a low-capacitance Schottky diode in a small SOT-363 footprint. Compare the 15 V reverse voltage rating against peak circuit voltages. Consider the 750 mA forward current limit for load requirements. Verify that the 6.7 pF capacitance meets RF bandwidth specifications.

RF Diode Part Context

The HSMS-270P-TR1G belongs to Broadcom's HSMS series of Schottky diodes. This series is designed for RF and microwave applications where low noise and fast switching are critical. The TR1G suffix indicates tape-and-reel packaging for automated assembly processes.

RF Diode Replacement Considerations

Verify pinout compatibility when substituting. Check if alternative Schottky diodes in SOT-363 packages meet the 15 V reverse voltage and 6.7 pF capacitance requirements. Confirm thermal dissipation capabilities match the 825 mW limit.