HSMS-2825-TR2G

RF Diode Overview

The HSMS-2825-TR2G is a surface mount RF Schottky barrier diode manufactured by Broadcom Limited. It features an unconnected pair configuration housed in a SOT-363 package. Key electrical specifications include a breakdown voltage of 15 V, a forward voltage of 340 mV at 0.5 mA, and a reverse leakage current of 10 nA at 15 V. The device exhibits a dynamic resistance of 1 Ω and a capacitance of 100 pF. Operating temperatures range from -65°C to +150°C.

RF Diode Feature Summary

• Provides matched diodes for consistent performance in differential detector applications
• Utilizes adjacent wafer sites during manufacturing to ensure high degree of match between pairs
• Offers unique configurations in the compact SOT-363 surface mount package

RF Diode Applications

• Differential detectors requiring temperature compensation
• Voltage doubler circuits for improved output voltage
• Temperature compensated large signal detectors

RF Diode Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for end-of-life notifications prior to finalizing procurement plans. Ensure storage conditions adhere to specified temperature ranges to maintain device integrity.

RF Diode Selection Notes

Select this part when matched diode characteristics are critical for circuit performance. The unconnected pair configuration allows flexible circuit design for differential amplifiers. Consider thermal resistance values when designing heat dissipation strategies for high-power applications.

RF Diode Part Context

This component belongs to the HSMS-282x series of surface mount RF Schottky barrier diodes. The series offers various package configurations including single, dual, and quad versions. The HSMS-2825 specifically provides an unconnected pair suitable for balanced mixer and detector designs.

RF Diode Replacement Considerations

HSMS-282K serves as a high-isolation alternative within the same family.