HUF75631SK8

$0.98

Description：N-CHANNEL POWER MOSFET
Series：UltraFET®
Mfr：Fairchild Semiconductor
Package：Bulk

SKU:9e32057613ca Category: Single FETs, MOSFETs Brand: Fairchild Semiconductor

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Product introduction

HUF75631SK8 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is N-CHANNEL POWER MOSFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for HUF75631SK8

Description：N-CHANNEL POWER MOSFET
Series：UltraFET®
Mfr：Fairchild Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：39mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：79 nC @ 20 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1225 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SOIC
Package / Case：8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for HUF75631SK8

HUF75631SK8

Single FETs, MOSFETs Overview

The HUF75631SK8 is an N-channel MOSFET from the UltraFET series, manufactured by onsemi (formerly Fairchild Semiconductor). It features a drain-source voltage of 100 V and a continuous drain current of 5.5 A at 25°C. The device has a maximum gate-source voltage of ±20 V and a threshold voltage of 4 V at 250 µA. Key electrical parameters include a maximum gate charge of 79 nC at 20 V, input capacitance of 1225 pF at 25 V, and a maximum power dissipation of 2.5 W. The component operates within a temperature range of -55°C to 150°C junction temperature.

Single FETs, MOSFETs Feature Summary

N-channel enhancement mode MOSFET technology
UltraFET series design for optimized performance
Surface mount construction in 8-SOIC package

Single FETs, MOSFETs Applications

General purpose switching applications
Power management circuits
DC-DC converter designs

Single FETs, MOSFETs Procurement Notes

Verify part authenticity as this component is obsolete and no longer manufactured. Confirm substitution with Alpha & Omega Semiconductor AO4482 if availability is required. Check datasheet specifications against original Fairchild documentation to ensure compatibility with existing circuit designs before procurement.

Single FETs, MOSFETs Selection Notes

Select this component for low-voltage switching applications requiring 100 V breakdown. Consider the 8-SOIC package constraints for thermal management given the 2.5 W power dissipation limit. Evaluate the 5.5 A current rating against peak load requirements. Verify gate drive compatibility with the 4 V threshold specification.

Single FETs, MOSFETs Part Context

This part belongs to the UltraFET family of power MOSFETs originally developed by Fairchild Semiconductor and later acquired by onsemi. The HUF75 series represents high-performance silicon gate technology designed for efficient power switching. The SK8 suffix indicates the specific 8-SOIC surface mount packaging configuration used for this device variant.