HUF75645S3S

$1.27

Description：MOSFET N-CH 100V 75A D2PAK
Series：UltraFET™
Mfr：onsemi
Package：Tube

SKU:690ff616b494 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

HUF75645S3S is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 100V 75A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for HUF75645S3S

Description：MOSFET N-CH 100V 75A D2PAK
Series：UltraFET™
Mfr：onsemi
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：14mOhm @ 75A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：238 nC @ 20 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3790 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：310W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263 (D2PAK)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for HUF75645S3S

HUF75645S3S

Single FETs, MOSFETs Overview

The HUF75645S3S is a discontinued N-Channel UltraFET Power MOSFET manufactured by onsemi. It features a 100 V drain-to-source voltage rating and supports a continuous drain current of 75 A at 25°C case temperature. The device exhibits an ultra-low on-resistance of 14 mΩ at VGS = 10V. Key electrical parameters include a gate threshold voltage ranging from 2 V to 4 V, total gate charge of 198 nC typical, and input capacitance of 3790 pF. Thermal resistance from junction to case is specified at 0.48 °C/W for the TO-263AB package.

Single FETs, MOSFETs Feature Summary

Ultra low on-resistance design for high efficiency
Temperature compensated PSPICE and SABER simulation models available
Unclamped inductive switching (UIS) capability defined by rating curves

Single FETs, MOSFETs Applications

High frequency power conversion circuits
Motor control applications requiring robust switching performance
DC-DC converter designs utilizing single-channel N-Channel topology

Single FETs, MOSFETs Procurement Notes

This component is officially marked as discontinued and is not recommended for new designs. Buyers must contact an onsemi representative directly for further information regarding availability or lifecycle status. Verify compliance documentation such as RoHS and REACH requirements through official channels before considering any existing stock for legacy projects.

Single FETs, MOSFETs Selection Notes

Designers should evaluate the thermal resistance and maximum junction temperature limits when selecting this part for high-current applications. The availability of detailed simulation models allows for accurate prediction of switching behavior and thermal impedance under various pulse widths. Ensure gate drive voltages align with the specified threshold and on-resistance conditions for optimal performance.

Single FETs, MOSFETs Part Context

The HUF75645S3S belongs to the HUF75645 series of N-Channel UltraFET Power MOSFETs. This series includes variants such as the HUF75645P3 in a TO-220AB package. The product line emphasizes low on-resistance and comprehensive simulation support for power electronics design.