HUF76419P3

$0.65

Description：MOSFET N-CH 60V 29A TO220-3
Series：UltraFET™
Mfr：onsemi
Package：Tube

SKU:95c361b196ac Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

HUF76419P3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 60V 29A TO220-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for HUF76419P3

Description：MOSFET N-CH 60V 29A TO220-3
Series：UltraFET™
Mfr：onsemi
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：35mOhm @ 29A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：28 nC @ 10 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：900 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：75W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220-3
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for HUF76419P3

HUF76419P3

Single FETs, MOSFETs Overview

The HUF76419P3 is a single N-Channel Logic Level UltraFET Power MOSFET manufactured by onsemi (formerly Fairchild Semiconductor). It features a TO-220AB package with a drain flange for thermal management. The device provides a drain-to-source voltage rating of 60V and supports continuous drain currents up to 27A at 25°C case temperature when driven at VGS=5V, or 29A at VGS=10V. The maximum drain-to-source on-resistance is specified as 0.040Ω at VGS=5V and 0.035Ω at VGS=10V. It operates within a junction temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

Logic level gate drive capability enabling direct control from standard logic voltages such as 5V and 4.5V.
Ultra-low on-resistance optimized for high-efficiency power switching applications.
Robust avalanche energy handling capabilities defined by unclamped inductive switching ratings.
Integrated body diode with defined reverse recovery characteristics for synchronous rectification.

Single FETs, MOSFETs Applications

DC-DC converter circuits requiring low-side switching.
Motor driver stages utilizing logic-level control signals.
Power management modules operating within the 60V voltage domain.

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distribution channels due to historical manufacturing transitions. Confirm RoHS compliance status and material composition declarations against current regulatory requirements. Review datasheet revision history for any updates to electrical parameters or thermal characteristics prior to final design integration.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring 60V blocking capability with logic-level gate drive compatibility. Ensure adequate heatsinking is provided to maintain junction temperatures within limits given the 75W power dissipation rating. Evaluate thermal resistance values for the specific PCB layout and mounting conditions to guarantee reliable operation under continuous load.

Single FETs, MOSFETs Part Context

This part belongs to the UltraFET family of power MOSFETs, characterized by advanced trench technology for reduced on-resistance. Originally developed by Fairchild Semiconductor, the product line was integrated into onsemi's portfolio following corporate acquisitions. The TO-220AB package variant offers a cost-effective solution for through-hole assembly in industrial and consumer power electronics.