Single FETs, MOSFETs IAUTN12S5N018TATMA1 product image

IAUTN12S5N018TATMA1

$6.54
  • Description:MOSFET_(120V 300V)
  • Series:OptiMOS™ 5
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:05e7b1845167 Category: Brand:

  
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IAUTN12S5N018TATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET_(120V 300V). Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IAUTN12S5N018TATMA1

  • Description:MOSFET_(120V 300V)
  • Series:OptiMOS™ 5
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):120 V
  • Current - Continuous Drain (Id) @ 25°C:-
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-55°C ~ 175°C
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-HDSOP-16-2
  • Package / Case:16-PowerSOP Module

Single FETs, MOSFETs datasheet and documents for IAUTN12S5N018TATMA1

IAUTN12S5N018TATMA1

Single FETs, MOSFETs Overview

The IAUTN12S5N018TATMA1 is an OptiMOS™ 5 automotive power MOSFET featuring a 120 V drain-source breakdown voltage and a maximum on-state resistance of 1.8 mΩ at 10 V gate drive. It supports a continuous chip-limited drain current of 309 A and operates within a junction temperature range of -55 °C to +175 °C. The device utilizes a PG-HDSOP-16-1 package with a tab for thermal management, achieving a thermal resistance from junction to case top of 0.42 K/W.

Single FETs, MOSFETs Feature Summary

  • Optimized for high-efficiency power switching in automotive environments
  • Robust design validated beyond standard automotive reliability requirements
  • Capable of withstanding peak reflow temperatures up to 260°C

Single FETs, MOSFETs Applications

  • General automotive applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging and reel specifications. Ensure that the component meets all required automotive qualification standards before integration into final designs.

Single FETs, MOSFETs Selection Notes

Select this component when a 120 V rating and low conduction losses are required for automotive systems. Consider the PG-HDSOP-16-1 package dimensions and thermal dissipation capabilities relative to the system's cooling infrastructure.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS™ 5 family of N-channel enhancement mode MOSFETs designed specifically for automotive use. It represents a generation of power transistors focused on reducing size while maintaining high robustness and electrical performance.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon cross-reference lists for verified substitutes. Do not assume compatibility based solely on matching voltage or resistance ratings without verifying package and pinout alignment.

Single FETs, MOSFETs FAQ

Is the IAUTN12S5N018TATMA1 qualified for automotive applications?

Yes, the product has been validated according to AEC-Q101 standards and features extended qualification beyond these requirements.

What is the maximum operating temperature for this MOSFET?

The device supports an operating and storage temperature range from -55 °C to +175 °C.

IAUTN12S5N018TATMA1IAUTN12S5N018TATMA1
$6.54
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