IDH10G65C5ZXKSA2

Single Diodes Overview

The IDH10G65C5ZXKSA2 is a Silicon Carbide (SiC) Schottky diode manufactured by Infineon Technologies. It features a 650 V repetitive reverse voltage rating and a 10 A average forward current capability in a TO-220AC package. The component exhibits a typical forward voltage of 1.5 V at rated current, with a maximum reverse leakage current of 650 nA. It supports a forward surge current of 80 A and operates within a junction temperature range of -55°C to +175°C. This device belongs to the CoolSiC product family, designed for high-efficiency power conversion applications requiring low switching losses.

Single Diodes Feature Summary

• Utilizes silicon carbide technology for superior thermal performance and high-temperature operation up to 175°C.
• Features a zero-recovery charge characteristic inherent to Schottky barrier construction, minimizing switching losses.
• Provides robust ruggedness with high surge current handling capabilities suitable for demanding power circuits.

Single Diodes Applications

• Residential energy storage systems
• Utility-scale energy storage systems
• High-frequency DC/DC converters

Single Diodes Procurement Notes

Verify the specific suffix 'Z' against the official Infineon datasheet to confirm it denotes an obsolete or end-of-life status rather than a standard production variant. Ensure that any substitute components maintain identical pinout compatibility and electrical ratings to guarantee system integrity during replacement.

Single Diodes Selection Notes

Select this component for designs prioritizing efficiency in high-voltage, medium-current applications. The TO-220AC package facilitates through-hole mounting for robust mechanical connections. Consider thermal management requirements given the 104 W power dissipation potential under specific conditions, ensuring adequate heatsinking for continuous operation.

Single Diodes Part Context

This part belongs to Infineon's CoolSiC portfolio, specifically the XDH series of single Schottky diodes. These devices are engineered to replace traditional silicon fast recovery diodes, offering reduced conduction and switching losses. The IDH10G65C5ZXKSA2 represents a specific configuration within this lineup, tailored for 650 V class applications.

Single Diodes Replacement Considerations

Public records indicate this specific part number is obsolete. Substitutes must be sourced from the manufacturer's approved replacement list. Verify that alternative SiC diodes match the 650 V rating, 10 A current capacity, and TO-220AC footprint to ensure direct interchangeability without circuit redesign.

Single Diodes FAQ

Is the IDH10G65C5ZXKSA2 currently in active production?

No, public distributor data indicates that this specific part number is obsolete and no longer manufactured.

What is the maximum operating junction temperature for this diode?

The maximum operating junction temperature is specified as +175°C.