IGT60R070D1ATMA4

Single FETs, MOSFETs Overview

The IGT60R070D1ATMA4 is a 600V CoolGaN™ enhancement-mode power transistor manufactured by Infineon Technologies. It features a PG-HSOF-8-3 surface-mount package and operates within a junction temperature range of -55°C to 150°C. Key electrical parameters include a maximum drain-source voltage (VDS,max) of 600 V, a maximum on-state resistance (RDS(on),max) of 70 mΩ, and a typical gate charge (QG,typ) of 5.8 nC. The device supports a pulsed drain current (ID,pulse) of 60 A at 25°C case temperature and exhibits zero reverse-recovery charge (Qrr = 0 nC).

Single FETs, MOSFETs Feature Summary

• Enhancement mode operation providing normally-off switching capability.
• Ultra-fast switching characteristics with negligible reverse-recovery charge.
• Capable of bidirectional current flow through the intrinsic channel.
• Superior commutation ruggedness for high-stress switching environments.

Single FETs, MOSFETs Applications

• Industrial power supplies utilizing half-bridge topologies.
• Telecommunications infrastructure power conversion systems.
• Data center switch-mode power supplies (SMPS).
• Totem-pole Power Factor Correction (PFC) circuits.
• High-frequency LLC resonant converters.

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized Infineon channels or certified distributors. Confirm the specific ordering code matches the required tape-and-reel configuration. Ensure storage conditions adhere to moisture sensitivity level requirements prior to soldering. Review the latest reliability white paper for application-specific qualification standards before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Verify that the gate drive circuitry accommodates the recommended gate current limits and voltage clamping specifications. Assess system efficiency gains against potential electromagnetic interference (EMI) mitigation needs due to fast switching speeds. Ensure the selected topology aligns with the device's robustness under abnormal operating conditions.

Single FETs, MOSFETs Part Context

This component belongs to the Infineon CoolGaN™ family of gallium nitride power transistors. It is designed to replace traditional silicon MOSFETs in high-frequency applications. The device integrates advanced semiconductor technology to minimize switching losses and conduction losses simultaneously.

Single FETs, MOSFETs Replacement Considerations

Direct pin-compatible replacements may exist within the same CoolGaN™ series; verify datasheet compatibility for RDS(on) and QG values. Consult Infineon regional support for alternative part numbers if this specific ordering code is unavailable.

Single FETs, MOSFETs FAQ

Does the IGT60R070D1 exhibit reverse recovery charge?

No, the device has zero reverse-recovery charge (Qrr = 0 nC) as it conducts via its intrinsic channel rather than a body diode.

What is the maximum continuous drain current rating?

The maximum continuous drain current is 31 A when the case temperature is maintained at 25°C.

Is the device suitable for hard-switching applications?

Yes, the datasheet explicitly lists hard-switching topologies such as Totem-pole PFC and high-frequency LLC as supported applications.