IPA80R750P7XKSA1

Single FETs, MOSFETs Overview

The IPA80R750P7XKSA1 is an N-channel enhancement mode MOSFET from Infineon's CoolMOS P7 series, housed in a PG-TO 220 FullPAK package. It features an 800 V drain-source breakdown voltage and a maximum on-state resistance of 0.75 Ω at 25°C. The device supports a continuous drain current of 7 A at 25°C case temperature and handles pulsed currents up to 17 A. Key electrical parameters include a typical gate charge of 17 nC, a threshold voltage of 3 V, and a power dissipation rating of 27 W.

Single FETs, MOSFETs Feature Summary

• Integrated Zener diode for ESD protection
• Best-in-class figure of merit combining low RDS(on) and reduced Qg
• Fully qualified according to JEDEC standards for industrial applications
• Optimized thermal performance with low junction-to-case resistance

Single FETs, MOSFETs Applications

• Hard and soft switching flyback topologies
• LED lighting systems
• Low power chargers and adapters
• Auxiliary power supplies
• PFC stages in consumer and solar applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix XKSA1 against official Infineon documentation to confirm packaging details and compliance certifications. Ensure that the component matches the required PG-TO 220 FullPAK footprint for your PCB layout. Cross-reference the datasheet revision date to confirm the availability of the latest technical specifications and application notes before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high-voltage handling with optimized switching losses. The integrated ESD protection simplifies assembly by reducing failure risks. Consider the thermal resistance values for heat sink sizing in high-power density designs. Verify compatibility with drive voltages given the 3 V typical threshold voltage for efficient gate control.

Single FETs, MOSFETs Part Context

This part belongs to the CoolMOS P7 family, representing advanced superjunction technology from Infineon. It is designed to provide best-in-class performance metrics compared to previous generations. The device targets industrial and consumer power supply applications where efficiency and reliability are critical. It serves as a robust solution for high-voltage switching requirements.

Single FETs, MOSFETs Replacement Considerations

Consult the official cross-reference search tool or datasheet appendix for verified substitute part numbers. Ensure any replacement maintains the same voltage, current, and thermal ratings. Verify package compatibility and pinout alignment before implementation.

Single FETs, MOSFETs FAQ

What is the purpose of the integrated Zener diode?

The integrated Zener diode provides ESD protection, enhancing production yield and reducing field returns related to electrostatic discharge failures.

Is this component suitable for parallel operation?

Yes, but the use of ferrite beads on the gate or separate totem pole drivers is generally recommended for paralleling MOSFETs to ensure stability.

What is the maximum avalanche energy rating?

The single pulse avalanche energy (EAS) is rated at 16 mJ under specified test conditions.