Single FETs, MOSFETs IPB03N03LB G product image

IPB03N03LB G

$1.40
  • Description:MOSFET N-CH 30V 80A D2PAK
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:73b9ab85cbe9 Category: Brand:

  
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IPB03N03LB G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 80A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IPB03N03LB G

  • Description:MOSFET N-CH 30V 80A D2PAK
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:2.8mOhm @ 55A, 10V
  • Vgs(th) (Max) @ Id:2V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs:59 nC @ 5 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:7624 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):150W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-TO263-3
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for IPB03N03LB G

IPB03N03LB G

Single FETs, MOSFETs Overview

The IPB03N03LB G is an OptiMOS®2 N-channel power MOSFET in a PG-TO263-3 package. It features a 30 V drain-source voltage and an 80 A continuous drain current at Tc=25°C. The maximum on-resistance is 2.8 mΩ at Vgs=10V and 3.9 mΩ at Vgs=4.5V. Total gate charge is 59 nC, with a thermal resistance junction-to-case of 1 K/W. It supports a 175 °C operating temperature and includes a rated reverse diode dv/dt capability.

Single FETs, MOSFETs Feature Summary

  • Logic-level gate drive for direct compatibility with standard logic controllers
  • High avalanche energy rating for robust transient handling
  • Superior thermal performance with low junction-to-case resistance
  • Rated reverse diode dv/dt for high-speed switching applications

Single FETs, MOSFETs Applications

  • High-frequency DC/DC converters
  • Synchronous rectification circuits
  • Power supply output stages

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'G' to confirm lead-free plating and RoHS compliance status. Confirm the package marking '03N03LB' matches the physical component. Check the revision history (Rev 0.94) against your design requirements. Ensure the supplier provides valid traceability documentation for this obsolete part number.

Single FETs, MOSFETs Selection Notes

Select this component when a low Rds(on) value under 4 mΩ is required at 4.5 V gate drive. Consider the 1 K/W thermal resistance for heatsink calculations. Evaluate the 59 nC total gate charge against driver capabilities. Verify that the 30 V breakdown voltage meets the circuit's peak voltage stress limits.

Single FETs, MOSFETs Part Context

This device belongs to Infineon's OptiMOS®2 family of silicon power transistors. It utilizes planar trench technology to achieve low on-resistance. The PG-TO263-3 package provides a balance between surface-mount convenience and through-hole reliability. It is designed for general-purpose power switching applications.

Single FETs, MOSFETs Replacement Considerations

Check for IPB03N03LX G or other variants within the same OptiMOS®2 generation. Verify pinout compatibility before substitution. Compare thermal resistance and package dimensions to ensure mechanical fit.

IPB03N03LB GIPB03N03LB G
$1.40
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