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IPB03N03LB G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 80A D2PAK. Review the specifications below when checking this part for your BOM.
The IPB03N03LB G is an OptiMOS®2 N-channel power MOSFET in a PG-TO263-3 package. It features a 30 V drain-source voltage and an 80 A continuous drain current at Tc=25°C. The maximum on-resistance is 2.8 mΩ at Vgs=10V and 3.9 mΩ at Vgs=4.5V. Total gate charge is 59 nC, with a thermal resistance junction-to-case of 1 K/W. It supports a 175 °C operating temperature and includes a rated reverse diode dv/dt capability.
Verify the specific suffix 'G' to confirm lead-free plating and RoHS compliance status. Confirm the package marking '03N03LB' matches the physical component. Check the revision history (Rev 0.94) against your design requirements. Ensure the supplier provides valid traceability documentation for this obsolete part number.
Select this component when a low Rds(on) value under 4 mΩ is required at 4.5 V gate drive. Consider the 1 K/W thermal resistance for heatsink calculations. Evaluate the 59 nC total gate charge against driver capabilities. Verify that the 30 V breakdown voltage meets the circuit's peak voltage stress limits.
This device belongs to Infineon's OptiMOS®2 family of silicon power transistors. It utilizes planar trench technology to achieve low on-resistance. The PG-TO263-3 package provides a balance between surface-mount convenience and through-hole reliability. It is designed for general-purpose power switching applications.
Check for IPB03N03LX G or other variants within the same OptiMOS®2 generation. Verify pinout compatibility before substitution. Compare thermal resistance and package dimensions to ensure mechanical fit.
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