IPB040N08NF2SATMA1

$2.92

Description：MOSFET N-CH 80V 107A D2PAK
Series：StrongIRFET™ 2
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:316e40e83436 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IPB040N08NF2SATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 80V 107A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IPB040N08NF2SATMA1

Description：MOSFET N-CH 80V 107A D2PAK
Series：StrongIRFET™ 2
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：107A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id：3.8V @ 85µA
Gate Charge (Qg) (Max) @ Vgs：81 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3800 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：3.8W (Ta), 150W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TO263-3
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for IPB040N08NF2SATMA1

IPB040N08NF2SATMA1

Single FETs, MOSFETs Overview

The IPB040N08NF2SATMA1 is a StrongIRFET™ 2 N-Channel power MOSFET in a PG-TO263-3 package. It features an 80 V drain-source breakdown voltage and a maximum on-state resistance of 4.0 mΩ at VGS=10V. The device supports a continuous drain current of 107 A at TC=25°C and handles pulsed currents up to 428 A. Key dynamic parameters include a total gate charge of 54 nC, turn-on delay time of 14 ns, and fall time of 13 ns. Thermal characteristics specify a junction-to-case resistance of 1.0 °C/W, with operation supported from -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

Optimized for a wide range of applications
100% avalanche tested
Pb-free lead plating; RoHS compliant
Halogen-free according to IEC61249-2-21

Single FETs, MOSFETs Applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm tape-and-reel packaging quantities and marking codes. Ensure that the component meets all applicable JEDEC standards for product validation before integration into final designs. Cross-reference datasheet revision history to confirm parameter consistency.

Single FETs, MOSFETs Selection Notes

Select this component for circuits requiring robust avalanche energy handling and low switching losses within the 80 V voltage class. Evaluate thermal management requirements based on the specified junction-to-case resistance and safe operating area diagrams. Consider the normal level gate threshold characteristics when designing drive circuits for optimal conduction performance.

Single FETs, MOSFETs Part Context

This part belongs to the StrongIRFET™ 2 family of power transistors manufactured by Infineon Technologies. It utilizes silicon technology and is designed for surface-mount installation. The device is classified as a single-channel enhancement mode transistor intended for general-purpose power switching applications.