IPB097N08N3 G

Single FETs, MOSFETs Overview

The IPB097N08N3 G is an N-channel Power MOSFET from Infineon Technologies, belonging to the OptiMOS 3 product family. It utilizes silicon technology and is housed in a TO-263-7 (D2PAK-7) surface-mount package. The device features a drain-source voltage rating of 80 V and supports a continuous drain current of 180 A at 25°C. Key electrical parameters include a maximum on-resistance of 1.9 mΩ at 10 V gate drive, a typical gate charge of 155 nC, and a total power dissipation capability of 300 W. The component operates within a temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• OptiMOS 3 technology provides low on-resistance for high efficiency.
• Enhanced avalanche ruggedness for robust operation.
• Lead-free packaging compliant with RoHS standards.

Single FETs, MOSFETs Applications

• DC-DC converters
• Motor control applications
• Power supply units

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to ensure correct packaging configuration. Confirm that the requested part number matches the exact pinout and thermal characteristics required for the target PCB footprint. Cross-reference datasheet revisions to validate parameter consistency before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when an 80 V N-channel MOSFET with high current handling is required. The TO-263-7 package offers a balance between thermal performance and board space. Ensure the application's switching frequency and thermal management strategy align with the device's gate charge and thermal resistance specifications.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS 3 series, designed for general-purpose power switching. It serves as a standard silicon-based solution for medium-voltage applications. The numbering convention indicates an 80 V rating and specific on-resistance class within the broader portfolio of automotive-grade capable discrete semiconductors.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference tools for verified substitutes. Ensure any replacement maintains identical pinout, voltage ratings, and thermal performance to avoid redesigning the host circuit or compromising system reliability.