IPB180N04S401ATMA1

$3.10

Description：MOSFET N-CH 40V 180A TO263-7
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:dd19ecdd14c3 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IPB180N04S401ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 40V 180A TO263-7. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IPB180N04S401ATMA1

Description：MOSFET N-CH 40V 180A TO263-7
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id：4V @ 140µA
Gate Charge (Qg) (Max) @ Vgs：176 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：14000 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：188W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-TO263-7-3
Package / Case：TO-263-7, D2PAK (6 Leads + Tab)

Single FETs, MOSFETs datasheet and documents for IPB180N04S401ATMA1

IPB180N04S401ATMA1

Single FETs, MOSFETs Overview

The IPB180N04S4-01 is an N-channel enhancement mode OptiMOS-T2 power transistor. It features a PG-TO263-7-3 package and supports a drain-source voltage of 40 V. The device provides a continuous drain current of 180 A at Tc=25°C and Tc=100°C, with a pulsed drain current capability of 720 A. Maximum on-state resistance is 1.3 mΩ at Vgs=10V and Id=100A. Total gate charge reaches 176 nC maximum. Power dissipation is rated at 188 W at Tc=25°C. Junction temperature range spans from -55 °C to +175 °C.

Single FETs, MOSFETs Feature Summary

Automotive-grade qualification compliant with AEC standards
Ultra-low on-state resistance for high efficiency
100% avalanche tested for robustness
High thermal performance with low junction-to-case resistance

Single FETs, MOSFETs Applications

Automotive power distribution systems
Low-side switching applications
Motor control circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required tape-and-reel packaging configuration. Confirm that the component meets RoHS compliance requirements for your assembly process. Ensure the PG-TO263-7-3 footprint aligns with your PCB design guidelines. Check for any specific automotive quality certifications required by your supply chain.

Single FETs, MOSFETs Selection Notes

Select this component when high current handling and low conduction losses are critical in automotive environments. The 40V rating suits low-voltage DC systems. Consider the thermal resistance values for heatsinking requirements. Verify gate drive compatibility with the specified threshold and plateau voltages.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's OptiMOS-T2 family, designed for automotive reliability. It utilizes silicon technology within a surface-mount D2PAK-style package. The product line emphasizes green manufacturing processes and high power density for compact electronic designs.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include IPB180N04S4-00 and IPB180N04S4LH0ATMA1. Verify pinout compatibility and ensure electrical parameters such as Rds(on) and Vgs thresholds fall within acceptable tolerances for the target application.