IPB180N08S402ATMA1

$5.50

Description：MOSFET N-CH 80V 180A TO263-7
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:d2a302379f6b Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IPB180N08S402ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 80V 180A TO263-7. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IPB180N08S402ATMA1

Description：MOSFET N-CH 80V 180A TO263-7
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：2.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id：4V @ 220µA
Gate Charge (Qg) (Max) @ Vgs：167 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：11550 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：277W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-TO263-7-3
Package / Case：TO-263-7, D2PAK (6 Leads + Tab)

Single FETs, MOSFETs datasheet and documents for IPB180N08S402ATMA1

IPB180N08S402ATMA1

Single FETs, MOSFETs Overview

The IPB180N08S4-02 is an N-channel enhancement mode power transistor from the OptiMOS-T2 series. It features a PG-TO263-7-3 package and supports a drain-source voltage of 80 V with a continuous drain current of 180 A at 25°C. The maximum on-state resistance is 2.2 mΩ, and it withstands pulsed currents up to 720 A. Operating temperatures range from -55°C to +175°C, with a thermal resistance junction-to-case of 0.54 K/W.

Single FETs, MOSFETs Feature Summary

AEC-Q101 qualified for automotive reliability standards
Ultra-low RDS(on) combined with ultra-high ID capability
100% avalanche tested for robustness under transient conditions

Single FETs, MOSFETs Applications

Automotive power distribution systems
High-current motor control applications
Industrial power switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required tape-and-reel packaging configuration. Confirm that the component meets the exact AEC-Q101 qualification requirements for your target automotive application. Ensure the PG-TO263-7-3 footprint aligns with your PCB design constraints before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when high current handling near 180 A is required alongside low conduction losses. The 80 V rating suits applications where higher voltage margins are unnecessary but efficiency is critical. Consider the 0.54 K/W thermal resistance for heatsinking calculations in confined automotive or industrial enclosures.

Single FETs, MOSFETs Part Context

This device belongs to Infineon's OptiMOS-T2 family, designed specifically for automotive-grade power switching. It utilizes silicon technology to deliver enhanced performance over previous generations. The part integrates advanced cell architecture to minimize resistance while maintaining high breakdown voltage capabilities.