Single FETs, MOSFETs IPB60R120P7ATMA1 product image

IPB60R120P7ATMA1

$2.42
  • Description:MOSFET N-CH 600V 26A D2PAK
  • Series:CoolMOS™ P7
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:cb6f278a8442 Category: Brand:

  
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IPB60R120P7ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 600V 26A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IPB60R120P7ATMA1

  • Description:MOSFET N-CH 600V 26A D2PAK
  • Series:CoolMOS™ P7
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):600 V
  • Current - Continuous Drain (Id) @ 25°C:26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:120mOhm @ 8.2A, 10V
  • Vgs(th) (Max) @ Id:4V @ 410µA
  • Gate Charge (Qg) (Max) @ Vgs:36 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1544 pF @ 400 V
  • FET Feature:-
  • Power Dissipation (Max):95W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-TO263-3
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for IPB60R120P7ATMA1

IPB60R120P7ATMA1

Single FETs, MOSFETs Overview

The IPB60R120P7ATMA1 is a 600V CoolMOS P7 power transistor in a PG-TO 263-3 package. It features a maximum drain-source voltage of 650V and a continuous drain current of 26A at 25°C case temperature. The device has a maximum on-state resistance of 120mΩ and a typical gate charge of 36nC. Pulsed drain current reaches 78A, with a single-pulse avalanche energy rating of 82mJ. Thermal resistance from junction to case is 1.31°C/W.

Single FETs, MOSFETs Feature Summary

  • Superjunction technology enabling low ringing tendency and high robustness against hard commutation
  • Excellent electrostatic discharge capability exceeding 2kV (HBM)
  • Optimized for both hard and soft switching applications such as PFC and LLC stages

Single FETs, MOSFETs Applications

  • Power factor correction stages
  • Hard switching PWM stages
  • Resonant switching stages

Single FETs, MOSFETs Procurement Notes

Verify the component authenticity by checking the marking code '60R120P7' on the device surface. Confirm the package type matches the PG-TO 263-3 outline dimensions provided in the datasheet. Ensure the ordering suffix ATMA1 corresponds to the required reel packaging format for your assembly line.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high efficiency in 600V applications. The low gate charge supports faster switching speeds while minimizing drive losses. Consider the thermal resistance values for adequate heat sinking design to maintain junction temperatures within the specified operating range during continuous operation.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon CoolMOS P7 series, representing the seventh generation of superjunction MOSFET technology. It serves as a successor to the P6 series, offering improved performance metrics including reduced switching and conduction losses. The series is fully qualified according to JEDEC standards for industrial applications.

Single FETs, MOSFETs Replacement Considerations

Direct replacements are not explicitly listed in the official documentation. Designers should evaluate other CoolMOS P7 variants based on specific RDS(on) and current requirements while ensuring package compatibility.

IPB60R120P7ATMA1IPB60R120P7ATMA1
$2.42
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