IPB60R280C6ATMA1

$2.34

Description：MOSFET N-CH 600V 13.8A D2PAK
Series：CoolMOS™ C6
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:3471ffec8700 Category: Single FETs, MOSFETs Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

IPB60R280C6ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 600V 13.8A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IPB60R280C6ATMA1

Description：MOSFET N-CH 600V 13.8A D2PAK
Series：CoolMOS™ C6
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：13.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：280mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id：3.5V @ 430µA
Gate Charge (Qg) (Max) @ Vgs：43 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：950 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：104W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TO263-3
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for IPB60R280C6ATMA1

IPB60R280C6ATMA1

Single FETs, MOSFETs Overview

The IPB60R280C6ATMA1 is a single N-channel enhancement mode Power MOSFET from Infineon's CoolMOS C6 series. It utilizes silicon technology and features a D2PAK-3 (TO-263-3) surface-mount package. Key electrical parameters include a drain-source voltage of 600 V, a continuous drain current of 13.8 A at case temperature, and a maximum on-state resistance of 280 mΩ at 10 V gate drive. The device supports a power dissipation of 104 W, operates within a junction temperature range of -55°C to +150°C, and has a typical gate charge of 43 nC.

Single FETs, MOSFETs Feature Summary

Integrates CoolMOS C6 superjunction technology for optimized high-voltage performance
Features an integrated body diode with specified forward voltage characteristics
Designed for robust operation across extended industrial temperature ranges

Single FETs, MOSFETs Applications

High-frequency switching power supplies
Motor control applications
DC-DC converter circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix ATMA1 against official datasheets to confirm packaging type and tape-and-reel specifications. Confirm RoHS compliance status and REACH SVHC declarations directly from the manufacturer's documentation before integration into designs.

Single FETs, MOSFETs Selection Notes

Select this component when a 600V rating and low on-resistance are required in a D2PAK footprint. Evaluate thermal management requirements based on the 104 W power dissipation limit and ensure gate drive voltages remain within the specified ±20 V limits.

Single FETs, MOSFETs Part Context

This part belongs to the CoolMOS C6 family, representing a generation of superjunction MOSFETs designed to balance conduction losses with switching performance. It serves as a surface-mount alternative to through-hole variants like the IPA60R280C6XKSA1 within the same electrical specification class.