Single FETs, MOSFETs IPI06CN10N G product image

IPI06CN10N G

$1.62
  • Description:MOSFET N-CH 100V 100A TO262-3
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:cf47c1b61a5b Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

IPI06CN10N G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 100A TO262-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IPI06CN10N G

  • Description:MOSFET N-CH 100V 100A TO262-3
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:6.5mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id:4V @ 180µA
  • Gate Charge (Qg) (Max) @ Vgs:139 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:9200 pF @ 50 V
  • FET Feature:-
  • Power Dissipation (Max):214W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:PG-TO262-3
  • Package / Case:TO-262-3 Long Leads, I2PAK, TO-262AA

Single FETs, MOSFETs datasheet and documents for IPI06CN10N G

IPI06CN10N G

Single FETs, MOSFETs Overview

The IPI06CN10N G is an N-channel Power MOSFET from Infineon's OptiMOS™ 2 series, housed in a TO-262 (I²PAK) package. It features a drain-source voltage of 100 V and a continuous drain current of 100 A at 25°C. The device exhibits a maximum on-state resistance of 6.2 mΩ at a gate-source voltage of 10 V. Thermal performance includes a junction-to-case thermal resistance of 1.1 K/W and a power dissipation capacity of 136 W. Operating temperatures range from -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

  • OptiMOS™ 2 technology provides low on-state resistance for high efficiency.
  • Enhanced avalanche ruggedness supports robust operation under transient conditions.
  • Lead-free packaging ensures compliance with RoHS standards.

Single FETs, MOSFETs Applications

  • DC-DC converter circuits
  • Motor control systems
  • Power supply units

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'G' against official documentation to confirm lead-free status and environmental compliance. Ensure the TO-262 package variant matches the design requirements. Cross-reference the manufacturer datasheet for updated product qualification reports and material content declarations before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component based on its 100 V rating and 100 A current capability. Evaluate the 6.2 mΩ on-resistance against system conduction loss targets. Consider the 1.1 K/W thermal resistance for heatsink sizing. Confirm that the operating temperature range meets the application environment constraints.

Single FETs, MOSFETs Part Context

This part belongs to the IPx06CN10N family, which includes variants like IPB06CN10N G and IPP06CN10N G. These devices share similar electrical characteristics but differ in package types such as TO-220-3 or D²-Pak. The IPI06CN10N G specifically utilizes the I²PAK form factor for through-hole mounting.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes within the same family include IPB06CN10N G and IPP06CN10N G. Verify pinout compatibility and thermal resistance values when swapping between these package variants.

IPI06CN10N GIPI06CN10N G
$1.62
Buy Now

Recent News