IPI80N06S3L06XK

Single FETs, MOSFETs Overview

The IPI80N06S3L-06 is an N-channel enhancement mode OptiMOS-T2 power transistor manufactured by Infineon Technologies. It features a PG-TO262-3-1 package and supports a continuous drain current of 80 A at 25°C, with a pulsed drain current capability of 320 A. The device has a maximum drain-source voltage of 55 V and a gate-source voltage rating of ±16 V. At Tc=25°C and VGS=10V, the maximum on-state resistance is 10.4 mΩ, reducing to 5.9 mΩ at VGS=10V and ID=56A. Power dissipation reaches 136 W at 25°C case temperature. Thermal resistance from junction to case is 1.1 K/W. Operating and storage temperatures range from -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• Automotive AEC-Q101 qualified for high reliability applications
• OptiMOS-T2 technology providing low on-state resistance and fast switching characteristics
• 100% avalanche tested for robust performance under transient conditions
• Green product compliant with RoHS standards

Single FETs, MOSFETs Applications

• Automotive power distribution systems
• Motor control circuits
• DC-DC converter stages
• High-side and low-side switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to ensure correct package type and marking code. Confirm that the component meets the required automotive qualification standards for your specific application environment. Check for any recent lifecycle status updates or alternative recommendations directly from the manufacturer before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high current handling capabilities within a 55 V system. Consider the thermal management requirements based on the specified junction-to-case thermal resistance. Ensure the gate drive voltage aligns with the optimal RDS(on) performance region defined in the electrical characteristics table for efficient operation.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS-T2 family of power transistors designed for automotive and industrial applications. It utilizes Infineon's trench MOSFET technology to achieve superior performance compared to standard planar devices. The IPI variant specifically denotes the through-hole PG-TO262-3-1 package configuration suitable for board-level mounting.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon cross-reference lists for verified substitutes. Ensure any replacement maintains equivalent AEC-Q101 qualification and package dimensions if mechanical constraints are critical.