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IPP100N06S205AKSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 100A TO220-3. Review the specifications below when checking this part for your BOM.
The IPP100N06S2-05 is an N-channel enhancement mode OptiMOS power transistor in a PG-TO220-3-1 package. It features a drain-source voltage of 55 V and a continuous drain current of 100 A at 25°C. The maximum on-state resistance is 5.0 mΩ at VGS=10V and ID=80A. Total gate charge is 170 nC, with a junction-to-case thermal resistance of 0.5 K/W. Power dissipation reaches 300 W at 25°C case temperature. It operates between -55°C and +175°C and is qualified to AEC-Q101 standards.
Verify the specific ordering code SP0002-18872 against your bill of materials. Confirm that the PG-TO220-3-1 package matches your PCB footprint requirements. Ensure design parameters stay within the absolute maximum ratings defined in the datasheet. Check for any recent lifecycle status updates directly from Infineon before finalizing procurement plans.
Select this component when a rugged N-channel MOSFET with automotive certification is required. The low RDS(on) minimizes conduction losses in high-current applications. Verify that the 55V rating provides sufficient headroom for your system's operating voltage. Consider the TO-220 package for through-hole mounting solutions requiring high thermal dissipation capabilities.
This device belongs to Infineon's OptiMOS family, designed for high-performance switching applications. It utilizes trench technology to achieve low on-resistance and fast switching speeds. The product line targets both industrial and automotive markets, emphasizing reliability and efficiency in power conversion stages.
The IPB100N06S2-05 is the surface-mount equivalent in a PG-TO263-3-2 package. Both share identical electrical characteristics and marking codes. Verify package compatibility and thermal management strategies when substituting between these variants.
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