IPP65R110CFDXKSA2

Single FETs, MOSFETs Overview

The IPP65R110CFDXKSA2 is an N-channel enhancement-mode MOSFET from the Infineon CoolMOS CFDA series. It features a maximum drain-source voltage of 650 V and a continuous drain current of 31.2 A at 25°C. The device has a maximum on-state resistance of 110 mΩ and a typical gate charge of 118 nC. It operates within a temperature range of -40°C to 150°C, with a maximum power dissipation of 277.8 W in a TO-220 package.

Single FETs, MOSFETs Feature Summary

• Automotive-grade reliability certified under AEC-Q101 standards for robust performance in demanding environments.
• Utilizes CoolMOS CFDA technology to achieve low conduction losses and high efficiency in power switching applications.

Single FETs, MOSFETs Applications

• Automotive power supply systems
• High-efficiency DC-DC converters
• Industrial motor control

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'XKSA2' against official documentation to confirm packaging details and availability status. Ensure compliance with RoHS directives and automotive qualification requirements relevant to the target application environment before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high voltage handling and automotive certification. Compare thermal resistance values against system heat sinking capabilities. Evaluate gate charge specifications relative to driver output strength to ensure optimal switching performance and minimize transition losses.

Single FETs, MOSFETs Part Context

This part belongs to the CoolMOS CFDA family, designed for high-voltage power switching. It represents an evolution in silicon carbide-doped trench MOSFET technology, offering improved figure of merit compared to previous generations while maintaining compatibility with standard TO-220 mounting solutions.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference guides for direct replacements. Verify pinout compatibility and thermal characteristics when substituting with other 650V TO-220 MOSFETs.