Single FETs, MOSFETs IRF1010NSTRL product image

IRF1010NSTRL

$1.33
  • Description:MOSFET N-CH 55V 85A D2PAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)

SKU:b9d9898b9c52 Category: Brand:

  
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IRF1010NSTRL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 85A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRF1010NSTRL

  • Description:MOSFET N-CH 55V 85A D2PAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):55 V
  • Current - Continuous Drain (Id) @ 25°C:85A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:11mOhm @ 43A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:120 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:3210 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):180W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:D2PAK
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for IRF1010NSTRL

IRF1010NSTRL

Single FETs, MOSFETs Overview

The IRF1010NSTRL is a single N-channel power MOSFET from Infineon Technologies, utilizing HEXFET technology. It features a DPAK-3 (TO-252-3) surface-mount package and operates with a drain-source voltage of 55 V. The device supports a continuous drain current of 85 A at case temperature and maintains a low on-resistance of 11 mΩ. Gate characteristics include a threshold voltage of 4 V and a total gate charge of 120 nC. It functions in enhancement mode with an operating temperature range spanning from -55 °C to +175 °C.

Single FETs, MOSFETs Feature Summary

  • HEXFET technology for optimized performance
  • Low on-resistance for efficient conduction
  • Enhancement mode operation
  • Wide thermal operating range

Single FETs, MOSFETs Applications

  • Power switching circuits
  • DC-DC converters
  • Motor control applications

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix against official documentation to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status through the manufacturer datasheet. Check availability as distribution channels may vary. Ensure the component matches the required thermal and electrical ratings for the target application before procurement.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high current handling in a compact surface-mount format. Evaluate the 11 mΩ on-resistance against thermal management requirements. Consider the 120 nC gate charge for driver capability. Verify that the 55 V breakdown voltage aligns with system voltage levels and transient conditions.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies. It is designed for general-purpose power switching applications. The DPAK-3 package provides a balance between thermal performance and board space efficiency. It represents a standard solution for medium-voltage, high-current switching tasks.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference tools for verified substitutes. Ensure any replacement matches the 55 V rating, 85 A current capacity, and TO-252-3 package dimensions. Verify pinout compatibility and thermal resistance values.

IRF1010NSTRLIRF1010NSTRL
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