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IRF1010NSTRL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 85A D2PAK. Review the specifications below when checking this part for your BOM.
The IRF1010NSTRL is a single N-channel power MOSFET from Infineon Technologies, utilizing HEXFET technology. It features a DPAK-3 (TO-252-3) surface-mount package and operates with a drain-source voltage of 55 V. The device supports a continuous drain current of 85 A at case temperature and maintains a low on-resistance of 11 mΩ. Gate characteristics include a threshold voltage of 4 V and a total gate charge of 120 nC. It functions in enhancement mode with an operating temperature range spanning from -55 °C to +175 °C.
Verify the specific suffix against official documentation to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status through the manufacturer datasheet. Check availability as distribution channels may vary. Ensure the component matches the required thermal and electrical ratings for the target application before procurement.
Select this component for designs requiring high current handling in a compact surface-mount format. Evaluate the 11 mΩ on-resistance against thermal management requirements. Consider the 120 nC gate charge for driver capability. Verify that the 55 V breakdown voltage aligns with system voltage levels and transient conditions.
This part belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies. It is designed for general-purpose power switching applications. The DPAK-3 package provides a balance between thermal performance and board space efficiency. It represents a standard solution for medium-voltage, high-current switching tasks.
Consult official cross-reference tools for verified substitutes. Ensure any replacement matches the 55 V rating, 85 A current capacity, and TO-252-3 package dimensions. Verify pinout compatibility and thermal resistance values.
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