IRF2807ZSTRR

$0.97

Description：MOSFET N-CH 75V 75A D2PAK
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)

SKU:496d52c5749c Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

IRF2807ZSTRR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 75V 75A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRF2807ZSTRR

Description：MOSFET N-CH 75V 75A D2PAK
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：75 V
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：9.4mOhm @ 53A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：110 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3270 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：170W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263 (D2PAK)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for IRF2807ZSTRR

IRF2807ZSTRR

Single FETs, MOSFETs Overview

The IRF2807ZSTRR is an N-channel HEXFET power MOSFET in a D2PAK (TO-263AB) surface-mount package. It features a 75V drain-source breakdown voltage and a maximum continuous drain current of 75A at 25°C case temperature. The device exhibits a typical on-resistance of 9.4mΩ at VGS=10V. Key electrical characteristics include a total gate charge of 71nC, a forward transconductance of 67S, and an internal source inductance of 7.5nH. It supports a junction temperature up to 175°C and allows repetitive avalanche operation.

Single FETs, MOSFETs Feature Summary

Advanced process technology enabling ultra-low on-resistance per silicon area
Designed for automotive applications with improved repetitive avalanche rating
Fast switching speed combined with dynamic dv/dt rating
Capable of operating at junction temperatures up to 175°C

Single FETs, MOSFETs Applications

Automotive power management systems
Low voltage DC-DC converters
High efficiency power switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix STRR indicates tape and reel packaging when sourcing. Confirm the manufacturer designation as International Rectifier or its successor entity. Ensure the component matches the D2PAK outline dimensions provided in the datasheet. Check for RoHS compliance markings consistent with the G4 lead-free designation.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring low conduction losses in 48V automotive architectures. The 9.4mΩ RDS(on) minimizes thermal generation under high load conditions. Evaluate the 75A current capability against peak surge requirements. Consider the 175°C thermal limit for compact heatsink designs without active cooling.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs from International Rectifier. It utilizes silicon-based technology optimized for low resistance and fast switching. The D2PAK package provides robust thermal performance for surface-mount assembly. It serves as a discrete solution for high-current switching tasks in constrained spaces.