IRF3515L

Single FETs, MOSFETs Overview

The IRF3515L is a single N-channel power MOSFET from Infineon Technologies, housed in a TO-263 (D2PAK) surface-mount package. It features a maximum drain-source voltage of 150 V and a continuous drain current of 41 A at 25°C. The device exhibits a maximum on-state resistance of 45 mΩ at a gate drive of 10 V. Key electrical parameters include a typical total gate charge of 78 nC and a maximum junction temperature rating of 175 °C.

Single FETs, MOSFETs Feature Summary

• Optimized low on-resistance for high-efficiency power switching
• Enhanced thermal performance via robust leadframe design
• Logic-level compatible gate threshold for direct driver interface

Single FETs, MOSFETs Applications

• DC-DC converter synchronous rectification
• Motor control bridge circuits
• Power supply output stages

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'L' against the manufacturer's official datasheet to confirm the exact package variant and tape-and-reel specifications. Ensure the component matches the required RoHS compliance status and check for any recent lifecycle notifications or obsolescence warnings before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component when a 150 V rating and approximately 41 A current handling are required in a D2PAK form factor. Evaluate the 45 mΩ on-resistance against the system's conduction loss limits and ensure the gate drive voltage supports the specified threshold characteristics for optimal switching performance.

Single FETs, MOSFETs Part Context

This part belongs to the IRF35xx series of N-channel power MOSFETs designed for general-purpose power switching applications. It shares similar electrical characteristics with other variants in the family but differs primarily in its physical packaging configuration, offering a balance between thermal dissipation capabilities and PCB space efficiency.