IRF510

Description：MOSFET N-CH 100V 5.6A TO220AB
Series：-
Mfr：Vishay Siliconix
Package：Tube

SKU:9b45f40e2481 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

IRF510 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 100V 5.6A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRF510

Description：MOSFET N-CH 100V 5.6A TO220AB
Series：-
Mfr：Vishay Siliconix
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：5.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：540mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：180 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：43W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for IRF510

IRF510

Single FETs, MOSFETs Overview

The IRF510 is a third-generation N-Channel Power MOSFET manufactured by Vishay Siliconix. It features a TO-220AB package with a drain-source voltage (VDS) of 100 V and a maximum continuous drain current (ID) of 5.6 A at 25 °C case temperature. The device exhibits a maximum on-state resistance (RDS(on)) of 0.54 Ω at VGS = 10 V. Key electrical parameters include a total gate charge (Qg) of 8.3 nC, a peak diode recovery dV/dt rating of 5.5 V/ns, and an operating junction temperature range from -55 °C to +175 °C.

Single FETs, MOSFETs Feature Summary

Dynamic dV/dt rating for high-speed switching applications
Repetitive avalanche rated capability for ruggedized operation
Fast switching characteristics with simple drive requirements
Ease of paralleling for higher current handling

Single FETs, MOSFETs Applications

Commercial-industrial power switching circuits
High-frequency power amplification stages
DC-DC converter topologies
Motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix when purchasing. Standard parts may have lead (Pb) terminations which are not RoHS-compliant. For compliant versions, select parts ending in PbF or BE3. Confirm the package type matches the design requirements, as the standard IRF510 utilizes the TO-220AB flange mount configuration.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a balance of low on-resistance and fast switching speeds within a 100 V voltage window. Ensure thermal management accommodates the linear derating factor of 0.29 W/°C above 25 °C case temperature. Verify that the gate drive circuitry can supply sufficient current to manage the 8.3 nC total gate charge effectively.

Single FETs, MOSFETs Part Context

This device belongs to the IRF series of third-generation power MOSFETs from Vishay Siliconix. These transistors are designed to offer improved performance over previous generations through optimized cell architecture. The TO-220AB package provides a cost-effective solution for power dissipation levels up to approximately 50 W in commercial and industrial environments.