IRF542

$1.29

Description：N-CHANNEL POWER MOSFET
Series：-
Mfr：Harris Corporation
Package：Bulk

SKU:34829fa57b9d Category: Single FETs, MOSFETs Brand: Harris Corporation

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Product introduction

IRF542 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Harris Corporation. Its product description is N-CHANNEL POWER MOSFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRF542

Description：N-CHANNEL POWER MOSFET
Series：-
Mfr：Harris Corporation
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：100mOhm @ 17A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：59 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1450 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：150W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for IRF542

IRF542

Single FETs, MOSFETs Overview

The IRF542 is a single-element, N-channel silicon power MOSFET manufactured by Harris Corporation. It operates in enhancement mode and is housed in a TO-220AB flange mount package with the drain connected to the case. The device supports a maximum continuous drain current of 25 A and withstands a minimum drain-source breakdown voltage of 100 V. Its maximum on-resistance is specified at 0.1 ohms. The component features an avalanche energy rating of 230 mJ and includes a built-in diode configuration. It is designed for operation up to a maximum junction temperature of 175 °C.

Single FETs, MOSFETs Feature Summary

N-channel silicon metal-oxide semiconductor construction
Flange mount package with direct drain connection
Built-in diode configuration

Single FETs, MOSFETs Applications

Power switching circuits
Motor control applications
General-purpose power amplification

Single FETs, MOSFETs Procurement Notes

Verify compliance status as the component is listed as non-RoHS. Confirm the manufacturer origin from Harris Corporation records. Ensure the TO-220AB package type matches the required mechanical constraints. Check for specific revision codes or date codes if traceability is required for the application.

Single FETs, MOSFETs Selection Notes

Select this component when a rugged N-channel MOSFET with a flange-mounted case is required for high-current switching. The 100V rating and 25A current capacity suit moderate voltage power stages. Consider the thermal management requirements associated with the 0.1 ohm on-resistance and the 175 °C maximum operating temperature limit.

Single FETs, MOSFETs Part Context

This part belongs to the Harris Corporation discrete semiconductor transistor category. It is classified specifically as a Power Field-Effect Transistor within the company's historical product lineup. The TO-220AB packaging indicates a through-hole mounting style suitable for board-level or chassis-mount installations.