IRF6633ATRPBF

Single FETs, MOSFETs Overview

The IRF6633ATRPBF is an N-Channel Power MOSFET from the HEXFET® series, utilizing DirectFET™ MP packaging. It features a Drain-to-Source Voltage (Vdss) of 20 V and a continuous drain current (Id) of 16 A at ambient temperature or 59 A at case temperature. The maximum on-state resistance (Rds(on)) is 5.6 mΩ at 10 V gate drive and 9.4 mΩ at 4.5 V. Total gate charge (Qg) is typically 11 nC with a maximum of 17 nC at 4.5 V. The device supports dual-sided cooling, operates within a junction temperature range of -40°C to +150°C, and has a power dissipation rating of 2.3 W at ambient or 89 W at case temperature.

Single FETs, MOSFETs Feature Summary

• Combines advanced silicon technology with DirectFET™ packaging for low profile and footprint compatibility
• Optimized for synchronous buck operation with minimized conduction and switching losses
• Supports dual-sided cooling to maximize thermal transfer efficiency
• Compatible with standard surface mount assembly techniques including vapor phase and reflow soldering

Single FETs, MOSFETs Applications

• High efficiency DC-DC converters
• Processor core power supplies
• Synchronous buck converters operating from 12 volt bus sources

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm package marking matches official datasheet specifications. Check for lead-free compliance indicators on the reel label. Ensure storage conditions maintain moisture sensitivity level integrity prior to soldering. Review manufacturer obsolescence notices for long-term supply availability.

Single FETs, MOSFETs Selection Notes

Evaluate thermal management requirements based on application duty cycle and cooling method. Compare gate charge parameters against available driver capabilities to ensure efficient switching. Verify voltage ratings exceed peak circuit transients. Assess package suitability for PCB layout constraints and mechanical height limitations.

Single FETs, MOSFETs Part Context

This component belongs to the Infineon HEXFET® family designed for high-frequency power conversion. The DirectFET™ MP variant offers enhanced thermal performance compared to standard packages while maintaining a small outline compatible with existing manufacturing equipment. It targets applications requiring high current density in compact form factors.

Single FETs, MOSFETs Replacement Considerations

IRF6633TRPBF

Single FETs, MOSFETs FAQ

What is the maximum allowable gate-to-source voltage?

The absolute maximum rating for gate-to-source voltage is ±20 V.

How does the package support thermal management?

The DirectFET™ MP package allows for dual-sided cooling, enabling heat dissipation from both the top drain surface and the bottom substrate to improve thermal resistance.