IRF7478QTRPBF

$0.99

Description：MOSFET N-CH 60V 7A 8-SOIC
Series：-
Mfr：Infineon Technologies
Package：Cut Tape (CT)

SKU:98895a6097e9 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRF7478QTRPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 7A 8-SOIC. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRF7478QTRPBF

Description：MOSFET N-CH 60V 7A 8-SOIC
Series：-
Mfr：Infineon Technologies
Package：Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：26mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：31 nC @ 4.5 V
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：1740 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for IRF7478QTRPBF

IRF7478QTRPBF

Single FETs, MOSFETs Overview

The IRF7478QTRPBF is a single N-channel HEXFET Power MOSFET manufactured by Infineon Technologies. It features a SO-8 surface mount package and operates with a maximum junction temperature of 150°C. Key electrical parameters include a drain-to-source breakdown voltage (Vds) of 60 V, a continuous drain current (Id) of 7.0 A at 25°C, and a maximum on-resistance (Rds(on)) of 26 mΩ at Vgs = 10V. The device supports a gate-to-source voltage of ±20 V and has a power dissipation rating of 2.5 W.

Single FETs, MOSFETs Feature Summary

Utilizes advanced process technology to achieve ultra-low on-resistance for improved efficiency.
Features fast switching speeds combined with an improved repetitive avalanche rating.
Designed for high reliability in wide variety of power applications.

Single FETs, MOSFETs Applications

Power management circuits
DC-DC converters
Motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and package type against official documentation before procurement. Confirm that the component meets the required industrial qualification standards and moisture sensitivity level specifications. Ensure compatibility with the intended thermal management design given the SO-8 package constraints.

Single FETs, MOSFETs Selection Notes

Select this component when a 60V N-channel MOSFET with low on-resistance is required in a compact SO-8 footprint. Consider the 150°C operating temperature limit and the 2.5W power dissipation capability relative to the board's thermal environment. Evaluate the gate charge requirements against the driving circuit capabilities.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It is designed as a surface-mount solution to reduce board space while maintaining robust performance characteristics suitable for general-purpose power switching applications.

Single FETs, MOSFETs Replacement Considerations

Consult official manufacturer resources for guidance on obsolete or end-of-life part numbers. Verify pinout and parameter compatibility if substituting with other HEXFET series components.