IRF7811TR

Single FETs, MOSFETs Overview

The IRF7811TR is a single N-channel HEXFET power MOSFET manufactured by Infineon Technologies, housed in an SO-8 surface-mount package. It features a drain-source voltage rating of 28 V and a continuous drain current capacity of 14 A at 25°C ambient temperature. The device utilizes CopperStrap interconnect technology to minimize electrical and thermal resistance. Key electrical parameters include a maximum on-resistance of 11 mΩ at VGS = 4.5 V and a typical total gate charge of 23 nC at VGS = 5 V.

Single FETs, MOSFETs Feature Summary

• Employs advanced HEXFET power MOSFET technology for optimized balance between on-resistance and gate charge.
• Integrates CopperStrap interconnect technology to significantly reduce package electrical and thermal resistance.
• Designed specifically for high-efficiency DC-DC converters powering mobile microprocessors.

Single FETs, MOSFETs Applications

• CPU core DC-DC converters
• High efficiency DC-DC converters for mobile microprocessors

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix (e.g., TRPBF) against official manufacturer documentation to confirm tape-and-reel packaging and lead-free compliance status. Confirm RoHS directive adherence through the latest material content declaration. Ensure the component matches the exact Infineon part number to avoid discrepancies with similar variants like the IRF7809.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low conduction and switching losses in compact form factors. The SO-8 package supports current ratings exceeding 14 A, reducing the need for paralleled devices. Evaluate thermal management requirements based on the specified junction-to-ambient thermal resistance values under defined mounting conditions.

Single FETs, MOSFETs Part Context

This component belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It is part of a chipset designed for synchronous rectification in DC-DC conversion stages. The device represents a generation of power semiconductors focused on improving efficiency and reliability in portable electronic systems.

Single FETs, MOSFETs Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.

Single FETs, MOSFETs FAQ

What is the maximum drain-source voltage rating?

The maximum drain-source voltage (VDS) rating is 28 V.

How does the package design impact performance?

The SO-8 package incorporates CopperStrap interconnect technology, which dramatically improves electrical and thermal resistance compared to standard packages.