IRF8113TRPBF-1

Single FETs, MOSFETs Overview

The IRF8113TRPBF-1 is a single N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a SO-8 surface-mount package and operates with a drain-to-source voltage of 30 V. The device supports a continuous drain current of 17.2 A at 25°C and handles pulsed currents up to 135 A. Key electrical characteristics include a maximum on-resistance of 5.6 mΩ at VGS=10V, a typical total gate charge of 24 nC, and a forward transconductance of 73 S. It is qualified for industrial applications with an operating junction temperature range from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Industry-standard pinout in SO-8 package for multi-vendor compatibility
• HEXFET technology providing low static and dynamic losses
• Industrial qualification ensuring increased reliability
• RoHS compliant and halogen-free construction

Single FETs, MOSFETs Applications

• Synchronous rectification in DC-DC converters
• Low voltage power supplies
• Battery protection circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix TRPbF-1 against the manufacturer's official documentation to confirm tape-and-reel packaging and lead-free status. Confirm that the component meets RoHS compliance requirements for your target market. Check for any obsolescence notices or lifecycle changes directly from Infineon before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a 30V rating with high current handling capabilities in a compact surface-mount form factor. The low gate charge and fast switching characteristics make it suitable for high-frequency conversion topologies. Ensure thermal management strategies account for the junction-to-ambient thermal resistance when designing for ambient temperatures near the upper operational limit.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It utilizes planar strip technology to achieve low on-resistance and robust avalanche performance. The SO-8 package provides a balance between thermal dissipation and board space efficiency, making it a standard choice for various power management integrated circuit implementations.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference tools for verified substitutes. Ensure replacement parts match the 30V VDS, SO-8 package, and industrial temperature range specifications.