Single FETs, MOSFETs IRF9410PBF product image

IRF9410PBF

  • Description:MOSFET N-CH 30V 7A 8SO
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:ee7b3b63e11b Category: Brand:

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IRF9410PBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 7A 8SO. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRF9410PBF

  • Description:MOSFET N-CH 30V 7A 8SO
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:30mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:27 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:550 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):2.5W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-SO
  • Package / Case:8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for IRF9410PBF

IRF9410PBF

Single FETs, MOSFETs Overview

The IRF9410PBF is a single N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It utilizes an SO-8 surface-mount package and operates with a maximum drain-source voltage of 30 V. The device supports a continuous drain current of 7 A at 25°C ambient temperature, with a maximum power dissipation of 2.5 W under the same conditions. Key electrical characteristics include a maximum on-resistance of 30 mΩ at a gate-source voltage of 10 V, and 50 mΩ at 4.5 V. Typical gate charge is 18 nC at 10 V, with a gate-drain charge of 4.9 nC. The component features a thermal resistance from junction to ambient of 50 K/W, a maximum junction temperature of 150 °C, and a minimum gate threshold voltage of 1 V.

Single FETs, MOSFETs Feature Summary

  • HEXFET technology provides enhanced switching performance and low on-resistance for efficient power management.
  • Single N-channel configuration designed for high-speed switching applications in compact surface-mount packages.

Single FETs, MOSFETs Applications

  • DC-DC converters
  • Power switching circuits
  • Motor control applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm the packaging format. The PBF suffix indicates lead-free tape and reel or tube packaging depending on the distributor's standard, while TRPBF denotes tape and reel. Confirm the moisture sensitivity level and storage conditions prior to assembly. Ensure the component meets RoHS compliance requirements for the target market. Cross-reference the datasheet version to ensure all electrical parameters match the design specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a 30 V N-channel MOSFET with low on-resistance is required in an SO-8 package. Consider the 7 A current rating and 2.5 W power dissipation limits relative to the thermal environment. Evaluate the gate charge requirements against the driving circuit capabilities. Compare the on-resistance values at different gate voltages to ensure compatibility with the logic levels used in the application.

Single FETs, MOSFETs Part Context

The IRF9410PBF belongs to the HEXFET family of power MOSFETs from Infineon Technologies. This series is known for combining high current handling with low on-resistance in small footprints. The SO-8 package allows for efficient heat dissipation and easy integration into printed circuit boards. The component is part of a broader range of discrete power semiconductors designed for various industrial and consumer electronics applications.

Single FETs, MOSFETs Replacement Considerations

Check for direct pin-compatible alternatives within the same voltage and current ratings. Verify that any substitute maintains similar on-resistance and gate charge characteristics. Ensure the replacement component offers comparable thermal performance and package dimensions. Confirm availability and lead times for potential alternative part numbers before finalizing the design change.

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