IRFI540NPBF

$1.48

Description：MOSFET N-CH 100V 20A TO220AB FP
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:4e0c619070b1 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRFI540NPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 20A TO220AB FP. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFI540NPBF

Description：MOSFET N-CH 100V 20A TO220AB FP
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：52mOhm @ 11A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：94 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1400 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：54W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220AB Full-Pak
Package / Case：TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for IRFI540NPBF

IRFI540NPBF

Single FETs, MOSFETs Overview

The IRFI540NPbF is a single N-channel HEXFET power MOSFET in a TO-220 Full-Pak package. It features a drain-source breakdown voltage of 100V and a continuous drain current of 20A at 25°C case temperature. The maximum static drain-to-source on-resistance is 0.052Ω at VGS=10V. The device supports an operating junction temperature range from -55°C to +175°C, with a maximum power dissipation of 54W.

Single FETs, MOSFETs Feature Summary

Features an isolated package design that eliminates the need for additional insulating hardware during mounting.
Provides high voltage isolation capability equivalent to using a standard mica barrier.
Utilizes advanced processing techniques to achieve low on-resistance per silicon area.

Single FETs, MOSFETs Applications

Commercial-industrial applications requiring isolated power switching
High-efficiency power conversion circuits
General-purpose switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'PbF' indicates lead-free compliance as documented. Confirm the package type matches the required thermal and mechanical constraints for the target application. Ensure the industrial qualification level meets the operational environment requirements. Cross-reference the datasheet revision date against manufacturing batches for accurate parameter validation.

Single FETs, MOSFETs Selection Notes

Select this component when high voltage isolation is required without external insulators. The TO-220 Full-Pak offers lower thermal resistance compared to standard packages. Consider the 20A continuous current rating and 100V breakdown voltage for suitable load conditions. Evaluate the thermal management needs based on the specified junction-to-case resistance.

Single FETs, MOSFETs Part Context

This part belongs to the Fifth Generation HEXFET family from International Rectifier, now Infineon Technologies. It utilizes advanced processing to optimize on-resistance and switching speed. The product line is designed for ruggedized performance and high efficiency in various power electronics applications.

Single FETs, MOSFETs Replacement Considerations

IRF540N: Standard non-isolated alternative with similar electrical ratings but requires separate insulation hardware.

Single FETs, MOSFETs FAQ

What is the primary advantage of the TO-220 Full-Pak package?

It provides high isolation capability and low thermal resistance between the tab and heat sink, eliminating the need for additional insulating hardware.