Single FETs, MOSFETs IRFIZ44NPBF product image

IRFIZ44NPBF

$1.74
  • Description:MOSFET N-CH 55V 31A TO220AB FP
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:acac53e0b022 Category: Brand:

  
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IRFIZ44NPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 31A TO220AB FP. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFIZ44NPBF

  • Description:MOSFET N-CH 55V 31A TO220AB FP
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):55 V
  • Current - Continuous Drain (Id) @ 25°C:31A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:24mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:65 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1300 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):45W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220AB Full-Pak
  • Package / Case:TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for IRFIZ44NPBF

IRFIZ44NPBF

Single FETs, MOSFETs Overview

The IRFIZ44NPbF is a single N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a TO-220 Full-Pak package with an isolated tab design. The device supports a drain-source breakdown voltage of 55V and a continuous drain current of 31A at 25°C case temperature. Static drain-to-source on-resistance is specified at a maximum of 0.024Ω when VGS is 10V and ID is 17A. Total gate charge reaches up to 65nC under standard test conditions.

Single FETs, MOSFETs Feature Summary

  • Utilizes advanced processing techniques for low on-resistance per silicon area
  • Features an isolated package eliminating the need for additional insulating hardware
  • Provides high voltage isolation capability between sink and leads
  • Fully avalanche rated for ruggedized device performance

Single FETs, MOSFETs Applications

  • Commercial-industrial applications requiring thermal efficiency
  • Switching mode power supplies (SMPS)
  • Motor control circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix PbF indicates lead-free compliance against the manufacturer's latest documentation. Confirm that the TO-220 Full-Pak package dimensions match the target PCB footprint, as this variant differs from standard TO-220AB. Ensure the procurement channel provides original manufacturer packaging to guarantee component authenticity and traceability.

Single FETs, MOSFETs Selection Notes

Select this component when a robust N-channel MOSFET with integrated electrical isolation is required. The TO-220 Full-Pak design simplifies mounting by removing the need for separate insulators. Consider the 31A continuous current rating and 0.024Ω on-resistance for efficient power switching in industrial environments where thermal management is critical.

Single FETs, MOSFETs Part Context

This part belongs to the Fifth Generation HEXFET family from International Rectifier, now part of Infineon Technologies. These devices are designed for high-efficiency power switching applications. The product line emphasizes fast switching speeds combined with ruggedized device designs suitable for demanding commercial and industrial use cases.

Single FETs, MOSFETs Replacement Considerations

The datasheet notes that certain ratings utilize IRFZ44N data and test conditions. Verify compatibility with IRFZ44N variants if substituting, noting potential differences in package isolation or exact electrical limits.

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